发布求助
文献互助 智能选刊 最新文献

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)最新文献

筛选
英文 中文
Low-temperature bonding technologies for MEMS and 3D-IC MEMS和3D-IC的低温键合技术
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886173
M. Taklo, K. Schjølberg-Henriksen, N. Malik, H. Tofteberg, E. Poppe, D. O. Vella, J. Borg, A. Attard, Z. Hajdarevic, A. Klumpp, Peter Ramm
{"title":"Low-temperature bonding technologies for MEMS and 3D-IC","authors":"M. Taklo, K. Schjølberg-Henriksen, N. Malik, H. Tofteberg, E. Poppe, D. O. Vella, J. Borg, A. Attard, Z. Hajdarevic, A. Klumpp, Peter Ramm","doi":"10.1109/LTB-3D.2014.6886173","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886173","url":null,"abstract":"Recent developments within MEMS and IC call for a reduction in bonding temperature down to 350 °C and below. For MEMS, sensitive mechanical structures, thinned wafers, and heterogeneous integration of temperature-sensitive materials or materials with dissimilar temperature responses are main driving forces. For 3D-ICs, transistors' sensitivity to stress, and stress-induced failures in fragile dielectric layers are important motivations. The ongoing research on low-temperature bonding in the fields of MEMS and 3D-IC integration are partly overlapping. Therefore, extended knowledge exchange can be of mutual benefit, and will be attempted in this invited talk.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131441350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Via-last/backside-via 3D integration using a visible-light laser debonding technique 采用可见光激光脱粘技术的后置/后置3D集成
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886152
T. Fukushima, M. Mariappan, J. Bea, H. Hashimoto, Y. Sato, M. Motoyoshi, K. Lee, M. Koyanagi
{"title":"Via-last/backside-via 3D integration using a visible-light laser debonding technique","authors":"T. Fukushima, M. Mariappan, J. Bea, H. Hashimoto, Y. Sato, M. Motoyoshi, K. Lee, M. Koyanagi","doi":"10.1109/LTB-3D.2014.6886152","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886152","url":null,"abstract":"A visible-light laser debonding technique is introduced for via-last/backside-via 3D integration. Temporary bonding of 12-inch wafers with a temporary glue and the subsequent wafer thinning processes give small TTV within 1 μm by using an auto-TTV functions. Cu-TSV daisy chains with TSV diameters of 5 μm are formed in 50-μm-thick thinned Si wafers.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"291 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117317969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Large-scale Ge-on-Insulator wafers using low-temperature bonding and Epitaxial Lift-Off (ELO) technique 采用低温键合和外延提升(ELO)技术的大规模绝缘体上锗(Ge-on-Insulator)晶圆
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886161
E. Mieda, T. Maeda, T. Yasuda, A. Maeda, Y. Kurashima, H. Takagi, T. Aoki, T. Yamamoto, O. Ichikawa, T. Osada, M. Hata, H. Ashihara, T. Waseda, J. Yugami, T. Kikuchi, Y. Kunii
{"title":"Large-scale Ge-on-Insulator wafers using low-temperature bonding and Epitaxial Lift-Off (ELO) technique","authors":"E. Mieda, T. Maeda, T. Yasuda, A. Maeda, Y. Kurashima, H. Takagi, T. Aoki, T. Yamamoto, O. Ichikawa, T. Osada, M. Hata, H. Ashihara, T. Waseda, J. Yugami, T. Kikuchi, Y. Kunii","doi":"10.1109/LTB-3D.2014.6886161","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886161","url":null,"abstract":"We have realized patterned Ge-on-Insulator wafers by large-scale layer transfer technology. In conjunction with low-temperature bonding and patterned Epitaxial Lift-Off (ELO) technique, high quality Ge layer transfer was achieved in full-wafer scale.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"223 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120854559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fine-pitch interconnection by hybrid Cu/Sn-adhesive bonding for 3D integration 三维集成用Cu/ sn复合粘接的细间距互连
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886187
Masaki Ohyama, J. Mizuno, S. Shoji, M. Nimura, T. Nonaka, Y. Shinba, A. Shigetou
{"title":"Fine-pitch interconnection by hybrid Cu/Sn-adhesive bonding for 3D integration","authors":"Masaki Ohyama, J. Mizuno, S. Shoji, M. Nimura, T. Nonaka, Y. Shinba, A. Shigetou","doi":"10.1109/LTB-3D.2014.6886187","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886187","url":null,"abstract":"In this study, we developed 8 μm-pitch microbump bonding and encapsulating by hybrid Cu/Sn-adhesive bonding technology. As an adhesive material, we used a non-conductive film (NCF). To realize simultaneous bonding of a metal and an adhesive, planar structure was formed by chemical mechanical polishing (CMP). After the planarization, hybrid bonding was carried out at 250 °C for 60 s. From scanning electron microscopic (SEM) observation of the bonded sample, it was confirmed that 8 μm-pitch bump bonding and the NCF filling 2.5-μm gap between the chip and substrate were performed at the same time. This result indicated that hybrid bonding was effective in fine-pitch bonding and encapsulating for future three-dimensional (3D) integration.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126112213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Nanoporous gold as a versatile bonding intermediate 纳米多孔金作为多功能键合介质
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886185
Y.-C. Lin, W.-S. Wang, T. Gessner, M. Esashi
{"title":"Nanoporous gold as a versatile bonding intermediate","authors":"Y.-C. Lin, W.-S. Wang, T. Gessner, M. Esashi","doi":"10.1109/LTB-3D.2014.6886185","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886185","url":null,"abstract":"On-chip nanoporous gold fabrication was developed with binary alloy deposition subsequently a dealloying process. Using this novel nanostructure as the bonding intermediate, nanoporous gold on one bonding substrate was boned to a thin gold film, that realized low temperature bonding, heterogeneous bonding, ultra thin film bonding and room temperature bonding.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"282 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116227981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SiC wafer bonding by modified suface activated bonding method 改性表面活化键合法碳化硅晶圆键合
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886194
F. Mu, T. Suga, M. Fujino, Yoshikazu Takahashi, H. Nakazawa, K. Iguchi
{"title":"SiC wafer bonding by modified suface activated bonding method","authors":"F. Mu, T. Suga, M. Fujino, Yoshikazu Takahashi, H. Nakazawa, K. Iguchi","doi":"10.1109/LTB-3D.2014.6886194","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886194","url":null,"abstract":"3-inch 4H-SiC wafer bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature annealing. Strong bonding of the SiC wafers, greater than 32MPa (tensile strength), was demonstrated at room temperature under 5kN force for 300 seconds. Almost the entire wafer has been bonded very well except the small outermost region and few voids. The interface structure was analyzed to explore the bonding mechanism. An amorphous layer was found to be as the intermediate layer at the interface. Furthermore, to verify the stability of the interface, the interface changes after annealing were studied.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131558830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Microstructural change of Ag nanoporous bonding joint and interdiffusion of Cu / Ag during thermal aging 热时效过程中银纳米孔键合接头的显微组织变化及Cu / Ag的相互扩散
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886181
Min-Su Kim, H. Nishikawa
{"title":"Microstructural change of Ag nanoporous bonding joint and interdiffusion of Cu / Ag during thermal aging","authors":"Min-Su Kim, H. Nishikawa","doi":"10.1109/LTB-3D.2014.6886181","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886181","url":null,"abstract":"We proposed the low temperature solid state die-attach process using Ag nanoporous sheet for the high temperature power electronic packaging. The sound Cu/Cu joint can be achieved at 300 °C under nitrogen atmosphere through Ag nanoporous bonding method. In this study, the thermal stability of The Ag nanoporous bonding Cu/Cu joint and the interdiffusion behavior between Ag joining material and Cu substrate during thermal aging at 250 °C were investigated. The inserted Ag layer shows porous layer and this porous structure is gradually densified with extension of aging time. Kirkendall voids induced interdiffusion of Cu/Al are also identified.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114775498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Solid Liquid Inter-Diffusion bonding at low temperature 低温固液间扩散键合
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886198
J. Froemel, M. Baum, M. Wiemer, T. Gessner
{"title":"Solid Liquid Inter-Diffusion bonding at low temperature","authors":"J. Froemel, M. Baum, M. Wiemer, T. Gessner","doi":"10.1109/LTB-3D.2014.6886198","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886198","url":null,"abstract":"Solid Liquid Inter-Diffusion (SLID) bonding using the systems Cu/Ga and Au/In have been investigated regarding the bonding parameters and their influence on shear strength. Especially temperature dependence and composition of interface have been focused on.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134287446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Epitaxial growth of GaInAsP system on wafer-bonded InP/Si substrate 晶片键合InP/Si衬底上GaInAsP系统的外延生长
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886160
Keiichi Matsumoto, Yoshinori Kanaya, Junya Kishikawa, K. Shimomura
{"title":"Epitaxial growth of GaInAsP system on wafer-bonded InP/Si substrate","authors":"Keiichi Matsumoto, Yoshinori Kanaya, Junya Kishikawa, K. Shimomura","doi":"10.1109/LTB-3D.2014.6886160","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886160","url":null,"abstract":"We report here on the successful transfer of thin film InP epi-layer onto Si substrate using wafer direct bonding technique, to be used as a platform of GaInAsP system growth. Our approach is promising in terms of high density integration of InP-based several functional devices on Si substrate.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122720422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
100 mm diameter mono-crystalline 4H-SiC/polycrystalline-SiC bonded wafers fabricated by SAB for power device 采用SAB工艺制备了直径为100mm的单晶4H-SiC/多晶sic结合晶圆
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886195
K. Yagi, N. Hatta, T. Sakata, A. Minami, T. Kawahara, H. Uchida, K. Imaoka, T. Okuda, J. Suda, Y. Kurashima, H. Takagi
{"title":"100 mm diameter mono-crystalline 4H-SiC/polycrystalline-SiC bonded wafers fabricated by SAB for power device","authors":"K. Yagi, N. Hatta, T. Sakata, A. Minami, T. Kawahara, H. Uchida, K. Imaoka, T. Okuda, J. Suda, Y. Kurashima, H. Takagi","doi":"10.1109/LTB-3D.2014.6886195","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886195","url":null,"abstract":"We have developed 100mm in diameter 4H-SiC/poly-SiC bonded wafer by SAB method. The SiC bonded wafer demonstrated an excellent thermal stability against device processing temperature. SBDs fabricated on the SiC bonded wafer exhibited good I-V characteristics. These results suggest that it is a promising alternative wafer for SiC power device.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128134096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信