Large-scale Ge-on-Insulator wafers using low-temperature bonding and Epitaxial Lift-Off (ELO) technique

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI:10.1109/LTB-3D.2014.6886161

E. Mieda, T. Maeda, T. Yasuda, A. Maeda, Y. Kurashima, H. Takagi, T. Aoki, T. Yamamoto, O. Ichikawa, T. Osada, M. Hata, H. Ashihara, T. Waseda, J. Yugami, T. Kikuchi, Y. Kunii

引用次数: 0

Abstract

We have realized patterned Ge-on-Insulator wafers by large-scale layer transfer technology. In conjunction with low-temperature bonding and patterned Epitaxial Lift-Off (ELO) technique, high quality Ge layer transfer was achieved in full-wafer scale.

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采用低温键合和外延提升(ELO)技术的大规模绝缘体上锗(Ge-on-Insulator)晶圆

我们利用大规模层转移技术实现了Ge-on-Insulator晶圆的图像化。结合低温键合和ELO(图片化外延Lift-Off)技术，实现了全晶圆规模的高质量锗层转移。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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