100 mm diameter mono-crystalline 4H-SiC/polycrystalline-SiC bonded wafers fabricated by SAB for power device

Abstract

We have developed 100mm in diameter 4H-SiC/poly-SiC bonded wafer by SAB method. The SiC bonded wafer demonstrated an excellent thermal stability against device processing temperature. SBDs fabricated on the SiC bonded wafer exhibited good I-V characteristics. These results suggest that it is a promising alternative wafer for SiC power device.