晶片键合InP/Si衬底上GaInAsP系统的外延生长

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI:10.1109/LTB-3D.2014.6886160

Keiichi Matsumoto, Yoshinori Kanaya, Junya Kishikawa, K. Shimomura

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引用次数: 0

摘要

我们在这里报道了利用晶圆直接键合技术将薄膜InP外延层成功转移到Si衬底上，作为GaInAsP系统生长的平台。我们的方法在硅衬底上基于inp的几种功能器件的高密度集成方面是有希望的。

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Epitaxial growth of GaInAsP system on wafer-bonded InP/Si substrate

We report here on the successful transfer of thin film InP epi-layer onto Si substrate using wafer direct bonding technique, to be used as a platform of GaInAsP system growth. Our approach is promising in terms of high density integration of InP-based several functional devices on Si substrate.

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2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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