采用低温键合和外延提升(ELO)技术的大规模绝缘体上锗(Ge-on-Insulator)晶圆

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI:10.1109/LTB-3D.2014.6886161

E. Mieda, T. Maeda, T. Yasuda, A. Maeda, Y. Kurashima, H. Takagi, T. Aoki, T. Yamamoto, O. Ichikawa, T. Osada, M. Hata, H. Ashihara, T. Waseda, J. Yugami, T. Kikuchi, Y. Kunii

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引用次数: 0

摘要

我们利用大规模层转移技术实现了Ge-on-Insulator晶圆的图像化。结合低温键合和ELO(图片化外延Lift-Off)技术，实现了全晶圆规模的高质量锗层转移。

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Large-scale Ge-on-Insulator wafers using low-temperature bonding and Epitaxial Lift-Off (ELO) technique

We have realized patterned Ge-on-Insulator wafers by large-scale layer transfer technology. In conjunction with low-temperature bonding and patterned Epitaxial Lift-Off (ELO) technique, high quality Ge layer transfer was achieved in full-wafer scale.

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2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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