Via-last/backside-via 3D integration using a visible-light laser debonding technique

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI:10.1109/LTB-3D.2014.6886152

T. Fukushima, M. Mariappan, J. Bea, H. Hashimoto, Y. Sato, M. Motoyoshi, K. Lee, M. Koyanagi

引用次数: 2

Abstract

A visible-light laser debonding technique is introduced for via-last/backside-via 3D integration. Temporary bonding of 12-inch wafers with a temporary glue and the subsequent wafer thinning processes give small TTV within 1 μm by using an auto-TTV functions. Cu-TSV daisy chains with TSV diameters of 5 μm are formed in 50-μm-thick thinned Si wafers.

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采用可见光激光脱粘技术的后置/后置3D集成

介绍了一种用于过孔/后孔三维集成的可见光激光脱粘技术。用临时胶水临时粘接12英寸晶圆，然后进行晶圆减薄处理，利用自动TTV功能使TTV减小到1 μm以内。在50 μm厚的薄硅片上形成了直径为5 μm的Cu-TSV菊花链。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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