MEMS和3D-IC的低温键合技术

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI:10.1109/LTB-3D.2014.6886173

M. Taklo, K. Schjølberg-Henriksen, N. Malik, H. Tofteberg, E. Poppe, D. O. Vella, J. Borg, A. Attard, Z. Hajdarevic, A. Klumpp, Peter Ramm

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引用次数: 2

摘要

MEMS和IC的最新发展要求将键合温度降低到350°C及以下。对于MEMS来说，敏感的机械结构、薄晶片、温度敏感材料或具有不同温度响应的材料的异质集成是主要驱动力。对于3d集成电路来说，晶体管对应力的敏感性和脆弱介电层中应力诱发的失效是重要的动机。低温键合在MEMS和3D-IC集成领域的研究存在部分重叠。因此，扩大知识交流可以是互利的，这将在本次特邀演讲中进行尝试。

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Low-temperature bonding technologies for MEMS and 3D-IC

Recent developments within MEMS and IC call for a reduction in bonding temperature down to 350 °C and below. For MEMS, sensitive mechanical structures, thinned wafers, and heterogeneous integration of temperature-sensitive materials or materials with dissimilar temperature responses are main driving forces. For 3D-ICs, transistors' sensitivity to stress, and stress-induced failures in fragile dielectric layers are important motivations. The ongoing research on low-temperature bonding in the fields of MEMS and 3D-IC integration are partly overlapping. Therefore, extended knowledge exchange can be of mutual benefit, and will be attempted in this invited talk.

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2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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