热时效过程中银纳米孔键合接头的显微组织变化及Cu / Ag的相互扩散

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI:10.1109/LTB-3D.2014.6886181

Min-Su Kim, H. Nishikawa

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引用次数: 0

摘要

提出了利用银纳米孔片进行高温电力电子封装的低温固态贴装工艺。采用银纳米孔键合的方法，在氮气气氛下，在300℃的温度下获得良好的Cu/Cu连接。研究了银纳米孔键合Cu/Cu接头在250℃热时效过程中的热稳定性以及银连接材料与Cu衬底之间的相互扩散行为。随着时效时间的延长，钎料中插入的Ag层呈多孔层状，多孔结构逐渐致密化。还鉴定了引起Cu/Al相互扩散的Kirkendall空洞。

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Microstructural change of Ag nanoporous bonding joint and interdiffusion of Cu / Ag during thermal aging

We proposed the low temperature solid state die-attach process using Ag nanoporous sheet for the high temperature power electronic packaging. The sound Cu/Cu joint can be achieved at 300 °C under nitrogen atmosphere through Ag nanoporous bonding method. In this study, the thermal stability of The Ag nanoporous bonding Cu/Cu joint and the interdiffusion behavior between Ag joining material and Cu substrate during thermal aging at 250 °C were investigated. The inserted Ag layer shows porous layer and this porous structure is gradually densified with extension of aging time. Kirkendall voids induced interdiffusion of Cu/Al are also identified.

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2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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