采用SAB工艺制备了直径为100mm的单晶4H-SiC/多晶sic结合晶圆

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI:10.1109/LTB-3D.2014.6886195

K. Yagi, N. Hatta, T. Sakata, A. Minami, T. Kawahara, H. Uchida, K. Imaoka, T. Okuda, J. Suda, Y. Kurashima, H. Takagi

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引用次数: 1

摘要

我们用SAB法开发了直径为100mm的4H-SiC/聚sic键合硅片。SiC晶圆在器件加工温度下表现出优异的热稳定性。在SiC晶圆上制备的sdd具有良好的I-V特性。这些结果表明，它是一种很有前途的SiC功率器件替代晶圆。

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100 mm diameter mono-crystalline 4H-SiC/polycrystalline-SiC bonded wafers fabricated by SAB for power device

We have developed 100mm in diameter 4H-SiC/poly-SiC bonded wafer by SAB method. The SiC bonded wafer demonstrated an excellent thermal stability against device processing temperature. SBDs fabricated on the SiC bonded wafer exhibited good I-V characteristics. These results suggest that it is a promising alternative wafer for SiC power device.

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2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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