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2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)最新文献

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Room temperature bonding of wafers in air using Au-Ag alloy films 利用金-银合金薄膜在空气中进行室温键合
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886167
H. Kon, M. Uomoto, T. Shimatsu
{"title":"Room temperature bonding of wafers in air using Au-Ag alloy films","authors":"H. Kon, M. Uomoto, T. Shimatsu","doi":"10.1109/LTB-3D.2014.6886167","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886167","url":null,"abstract":"Room temperature bonding of wafers in air using Au-Ag alloy films was studied. Experimental results show that the bonding using Au-Ag alloy films containing Ag content up to 70-80 at% shows almost equal bonding performance in air to that obtained using Au films.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117237803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low temperature bonding for 3D 低温粘接3D
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886141
T. Suga
{"title":"Low temperature bonding for 3D","authors":"T. Suga","doi":"10.1109/LTB-3D.2014.6886141","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886141","url":null,"abstract":"Chemical interactions exist always between atoms on mated solids as the nature of solid surface. These interactions are origin of the adhesion energy between solids. It means that any solid materials should be bonded even if there is neither high temperature reaction nor diffusion process. This is the idea on which the surface activated bonding (SAB) at room temperature is based. Recent development of the SAB combining several processes of the surface activation provides a bridge to the conventional wafer bonding technique for bonding in ambient atmosphere.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129009123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Annealing characteristics of p+-Si/n-4H-SiC junctions by using surface-activated bonding 表面活化键合p+-Si/n-4H-SiC结的退火特性
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-02-06 DOI: 10.1109/LTB-3D.2014.6886193
S. Nishida, J. Liang, T. Hayashi, M. Morimoto, N. Shigekawa, M. Arai
{"title":"Annealing characteristics of p+-Si/n-4H-SiC junctions by using surface-activated bonding","authors":"S. Nishida, J. Liang, T. Hayashi, M. Morimoto, N. Shigekawa, M. Arai","doi":"10.1109/LTB-3D.2014.6886193","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886193","url":null,"abstract":"The effects of annealing on p+-Si/n-4H-SiC heterojunctons fabricated by using surface-activated bonding (SAB) were investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. I-V characteristics were improved and the flat-band voltages extracted from C-V characteristics were smaller by annealing at higher temperatures.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128421804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Annealing temperature dependence of SAB based Si/Si junctions SAB基Si/Si结的退火温度依赖性
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-02-06 DOI: 10.1109/LTB-3D.2014.6886191
M. Morimoto, J. Liang, S. Nishida, Chai Li, K. Takemura, N. Shigekawa
{"title":"Annealing temperature dependence of SAB based Si/Si junctions","authors":"M. Morimoto, J. Liang, S. Nishida, Chai Li, K. Takemura, N. Shigekawa","doi":"10.1109/LTB-3D.2014.6886191","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886191","url":null,"abstract":"Effects of annealing on SAB based Si/Si junctions were investigated by TEM observation and current-voltage (I-V) measurement. We observed amorphous like layer at the Si/Si interface prior to the annealing, which seemed to vanish after the annealing at 1000 °C. The I-V characteristics of Si/Si junctions showed that the current decreased when the junctions were annealed at comparatively lower temperatures. The current increased when the junctions were annealed at higher temperatures.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134427112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
3D integration applications for low temperature direct bond technology 用于低温直接键合技术的3D集成应用
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 1900-01-01 DOI: 10.1109/ltb-3d.2014.6886147
P. Enquist
{"title":"3D integration applications for low temperature direct bond technology","authors":"P. Enquist","doi":"10.1109/ltb-3d.2014.6886147","DOIUrl":"https://doi.org/10.1109/ltb-3d.2014.6886147","url":null,"abstract":"This paper describes low temperature direct bond technology and applications enabled by this technology. This technology includes ZiBond® and DBI® hybrid bonding. Enabled applications include backside illuminated (BSI) image sensors; stacked BSI image sensors; DBI® hybrid bond image sensors; 3D memory; higher performance, lower cost RF front ends; and reduced thickness, lower cost die stacks with reduced stress.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114721602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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