Annealing temperature dependence of SAB based Si/Si junctions

Abstract

Effects of annealing on SAB based Si/Si junctions were investigated by TEM observation and current-voltage (I-V) measurement. We observed amorphous like layer at the Si/Si interface prior to the annealing, which seemed to vanish after the annealing at 1000 °C. The I-V characteristics of Si/Si junctions showed that the current decreased when the junctions were annealed at comparatively lower temperatures. The current increased when the junctions were annealed at higher temperatures.