SAB基Si/Si结的退火温度依赖性

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-02-06 DOI:10.1109/LTB-3D.2014.6886191

M. Morimoto, J. Liang, S. Nishida, Chai Li, K. Takemura, N. Shigekawa

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引用次数: 1

摘要

通过TEM观察和电流-电压(I-V)测量研究了退火对SAB基Si/Si结的影响。在退火前，在Si/Si界面处观察到非晶态层，在1000℃退火后，非晶态层似乎消失了。Si/Si结的I-V特性表明，在相对较低的温度下，结的电流减小。当结在较高温度下退火时，电流增加。

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Annealing temperature dependence of SAB based Si/Si junctions

Effects of annealing on SAB based Si/Si junctions were investigated by TEM observation and current-voltage (I-V) measurement. We observed amorphous like layer at the Si/Si interface prior to the annealing, which seemed to vanish after the annealing at 1000 °C. The I-V characteristics of Si/Si junctions showed that the current decreased when the junctions were annealed at comparatively lower temperatures. The current increased when the junctions were annealed at higher temperatures.

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来源期刊

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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