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2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)最新文献

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Room temperature direct bonding of Si wafers smoothed by Ne beam irradiation Ne束辐照光滑硅片的室温直接键合
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886163
Y. Kurashima, A. Maeda, H. Takagi
{"title":"Room temperature direct bonding of Si wafers smoothed by Ne beam irradiation","authors":"Y. Kurashima, A. Maeda, H. Takagi","doi":"10.1109/LTB-3D.2014.6886163","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886163","url":null,"abstract":"We found the improvement of the bonding strength by surface smoothing effect of Ne fast-atom-beam (FAB). Surface roughness of a Si wafer decreased from 0.40 to 0.17 nm rms by applying the Ne FAB etching of 30 nm depth. The bonding strength was largely improved by Ne FAB surface smoothing and finally became equivalent to Si bulk strength.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126941283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermal activation of Au/Ti by interdiffusion for getter film integration in wafer-level vacuum packaging 晶圆级真空封装吸气剂膜集成中Au/Ti的互扩散热活化
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886174
M. Wu, J. Moulin, S. Lani, G. Hallais, C. Renard, A. Bosseboeuf
{"title":"Thermal activation of Au/Ti by interdiffusion for getter film integration in wafer-level vacuum packaging","authors":"M. Wu, J. Moulin, S. Lani, G. Hallais, C. Renard, A. Bosseboeuf","doi":"10.1109/LTB-3D.2014.6886174","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886174","url":null,"abstract":"Diffusion of Ti through a very thin Au cap layer has been studied at different temperatures and times by SEM, AFM, EDX, RBS and other techniques. Results show that Au/Ti with an ultrathin Au layer is a promising getter material for wafer-level vacuum packaging with an activation temperature ≤300°C.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"11 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113976297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Light propagation properties of Si waveguides after removing III–V layer on a III–V/SOI wafer fabricated by plasma activated bonding 等离子体激活键合制备III-V /SOI晶圆去除III-V层后Si波导的光传播特性
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886159
Jun-ichi Suzuki, Y. Hayashi, Y. Kuno, Joonhyun Kang, T. Amemiya, N. Nishiyama, S. Arai
{"title":"Light propagation properties of Si waveguides after removing III–V layer on a III–V/SOI wafer fabricated by plasma activated bonding","authors":"Jun-ichi Suzuki, Y. Hayashi, Y. Kuno, Joonhyun Kang, T. Amemiya, N. Nishiyama, S. Arai","doi":"10.1109/LTB-3D.2014.6886159","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886159","url":null,"abstract":"Qualities of Si waveguides after III-V/Si direct bonding process was evaluated, and propagation loss of 4.0 dB/cm was achieved, which is equivalent to the value of waveguides not including direct bonding process.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114628393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation on the effects of annealing process on the electrical properties of n+-Si/n-SiC junctions 退火工艺对n+-Si/n- sic结电性能影响的研究
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886192
Jianbo Liang, S. Nishida, Tomohiro Hayashi, M. Morimoto, N. Shigekawa, M. Arai
{"title":"Investigation on the effects of annealing process on the electrical properties of n+-Si/n-SiC junctions","authors":"Jianbo Liang, S. Nishida, Tomohiro Hayashi, M. Morimoto, N. Shigekawa, M. Arai","doi":"10.1109/LTB-3D.2014.6886192","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886192","url":null,"abstract":"The effects of annealing process on the electrical properties of n+-Si/n-SiC junctions fabricated by using surface-activated bonding are investigated. It is found by measuring their current-voltage (I-V) characteristics that the reverse-bias current decreases and activation energy increases with increasing annealing temperature to 700 °C.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132594298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Directly bonded Ge/GaAs by surface activated bonding for high efficiency III–V multi-junction solar cells 用表面活化键合法直接键合Ge/GaAs制备高效III-V型多结太阳能电池
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886189
Genki Kono, M. Fujino, Daiji Yamashita, Kentaroh Watanabe, M. Sugiyama, Y. Nakano, T. Suga
{"title":"Directly bonded Ge/GaAs by surface activated bonding for high efficiency III–V multi-junction solar cells","authors":"Genki Kono, M. Fujino, Daiji Yamashita, Kentaroh Watanabe, M. Sugiyama, Y. Nakano, T. Suga","doi":"10.1109/LTB-3D.2014.6886189","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886189","url":null,"abstract":"Ge/GaAs wafers have been bonded by surface activated bonding. TEM observation of the bonded interface shows that amorphous layer with thickness of about 5 nm has been formed. I-V characteristic of directly bonded p-Ge/p-GaAs shows diode-like properties. The electrical resistance of the bonded interface has achieved about 0.16 Ωcm2 at 0.1 V.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129932278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heterogeneous integration by wafer-to-wafer transfer technology 通过晶圆到晶圆转移技术实现异质集成
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886172
Shuji Tanaka
{"title":"Heterogeneous integration by wafer-to-wafer transfer technology","authors":"Shuji Tanaka","doi":"10.1109/LTB-3D.2014.6886172","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886172","url":null,"abstract":"Laser-assisted selective die transfer for wafer-level integration and packaging between different sizes of dies was developed, and applied to a 2 GHz chip-size-packaged film bulk acoustic wave oscillator. Wafer-to-wafer thin film transfer by laser-assisted peeling and metal-metal bonding was developed and applied to a monolithic bandwidth tunable surface acoustic wave (SAW) filter for TV white space cognitive wireless LAN.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133955634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Low temperature wafer bonding for wafer-level 3D integration 用于晶圆级3D集成的低温晶圆键合
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886148
V. Dragoi, B. Rebhan, J. Burggraf, N. Razek
{"title":"Low temperature wafer bonding for wafer-level 3D integration","authors":"V. Dragoi, B. Rebhan, J. Burggraf, N. Razek","doi":"10.1109/LTB-3D.2014.6886148","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886148","url":null,"abstract":"This work presents new results on low temperature wafer bonding processes. Low temperature Cu-Cu thermo-compression bonding was successfully performed at process temperatures lower than 200°C. A process flow was developed for stacking thin Si wafers (<;25 μm) using a combination of temporary bonding with rigid carrier and plasma activated wafer bonding. Together with high accuracy optical alignment technology the two processes can be used to address the needs of manufacturing processes based on TSV technology.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130918136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Surface-tension driven self-assembly for VCSEL chip bonding to achieve 3D and hetero integration 表面张力驱动的VCSEL芯片自组装键合，实现三维和异质集成
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886154
Y. Ito, T. Fukushima, K. Lee, K. Choki, T. Tanaka, M. Koyanagi
{"title":"Surface-tension driven self-assembly for VCSEL chip bonding to achieve 3D and hetero integration","authors":"Y. Ito, T. Fukushima, K. Lee, K. Choki, T. Tanaka, M. Koyanagi","doi":"10.1109/LTB-3D.2014.6886154","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886154","url":null,"abstract":"Self-assembly with liquid surface tension was applied to tiny chips that were difficult to manipulate. Dummy chips that mimics VCSEL were aligned toward hydrophilic sites surrounding a hydrophobic area on an Si interposer. The alignment accuracies were 0 and -2.0 μm in X and Y directions.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134109860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mechanical grinding of Au/SiO2 hybrid-bonded substrates for 3D integrated image sensors 用于三维集成图像传感器的Au/SiO2混合键合基板的机械磨削
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886150
K. Hagiwara, M. Goto, H. Ohtake, Y. Iguchi, T. Saraya, H. Toshiyoshi, E. Higurashi, T. Hiramoto
{"title":"Mechanical grinding of Au/SiO2 hybrid-bonded substrates for 3D integrated image sensors","authors":"K. Hagiwara, M. Goto, H. Ohtake, Y. Iguchi, T. Saraya, H. Toshiyoshi, E. Higurashi, T. Hiramoto","doi":"10.1109/LTB-3D.2014.6886150","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886150","url":null,"abstract":"Mechanical grinding is utilized to thin the backside Si layer of Au/SiO2 hybrid-bonded substrates. Due to the high bond strength after the surface activation treatment, the Si layer thickness could be reduced to 35 μm without chipping. The proposed approach is highly promising for the fabrication of three-dimensional integrated image sensors.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133353991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Coupling efficiency between laser diode and optical isolator integrated by photosensitive adhesive bonding 采用光敏胶粘接集成的激光二极管与光隔离器的耦合效率
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886155
Daisuke Tamura, Y. Okada, Y. Shoji, T. Mizumoto, H. Yokoi
{"title":"Coupling efficiency between laser diode and optical isolator integrated by photosensitive adhesive bonding","authors":"Daisuke Tamura, Y. Okada, Y. Shoji, T. Mizumoto, H. Yokoi","doi":"10.1109/LTB-3D.2014.6886155","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886155","url":null,"abstract":"Integrating technique between a laser diode and an optical isolator can be realized by photosensitive adhesive bonding. Coupling efficiency between a laser diode and a magneto-optic waveguide was calculated by means of beam propagation method.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114385457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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