退火工艺对n+-Si/n- sic结电性能影响的研究

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI:10.1109/LTB-3D.2014.6886192

Jianbo Liang, S. Nishida, Tomohiro Hayashi, M. Morimoto, N. Shigekawa, M. Arai

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引用次数: 1

摘要

研究了退火工艺对表面活化键合制备的n+-Si/n- sic结电学性能的影响。通过测量它们的电流-电压(I-V)特性发现，当退火温度升高到700℃时，反偏置电流减小，活化能增加。

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Investigation on the effects of annealing process on the electrical properties of n+-Si/n-SiC junctions

The effects of annealing process on the electrical properties of n+-Si/n-SiC junctions fabricated by using surface-activated bonding are investigated. It is found by measuring their current-voltage (I-V) characteristics that the reverse-bias current decreases and activation energy increases with increasing annealing temperature to 700 °C.

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来源期刊

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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