用于三维集成图像传感器的Au/SiO2混合键合基板的机械磨削

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI:10.1109/LTB-3D.2014.6886150

K. Hagiwara, M. Goto, H. Ohtake, Y. Iguchi, T. Saraya, H. Toshiyoshi, E. Higurashi, T. Hiramoto

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引用次数: 1

摘要

采用机械研磨法对Au/SiO2复合衬底背面Si层进行薄化处理。由于表面活化处理后的结合强度高，硅层厚度可降至35 μm而不发生碎裂。该方法在三维集成图像传感器的制造中具有广阔的应用前景。

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Mechanical grinding of Au/SiO2 hybrid-bonded substrates for 3D integrated image sensors

Mechanical grinding is utilized to thin the backside Si layer of Au/SiO2 hybrid-bonded substrates. Due to the high bond strength after the surface activation treatment, the Si layer thickness could be reduced to 35 μm without chipping. The proposed approach is highly promising for the fabrication of three-dimensional integrated image sensors.

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来源期刊

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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