Investigation on the effects of annealing process on the electrical properties of n+-Si/n-SiC junctions

Abstract

The effects of annealing process on the electrical properties of n+-Si/n-SiC junctions fabricated by using surface-activated bonding are investigated. It is found by measuring their current-voltage (I-V) characteristics that the reverse-bias current decreases and activation energy increases with increasing annealing temperature to 700 °C.