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2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)最新文献

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Investigation of high temperature process for III-V/SOI hybrid photonic devices with AlInAs oxidation current confinement layer AlInAs氧化电流约束层III-V/SOI杂化光子器件高温工艺研究
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886156
Y. Hayashi, Jun-ichi Suzuki, Y. Kuno, Joonhyun Kang, T. Amemiya, N. Nishiyama, S. Arai
{"title":"Investigation of high temperature process for III-V/SOI hybrid photonic devices with AlInAs oxidation current confinement layer","authors":"Y. Hayashi, Jun-ichi Suzuki, Y. Kuno, Joonhyun Kang, T. Amemiya, N. Nishiyama, S. Arai","doi":"10.1109/LTB-3D.2014.6886156","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886156","url":null,"abstract":"In order to realize AlInAs oxidation current confinement structures for III-V/SOI hybrid photonic devices, oxidation condition was investigated. With 4-hours ramp up time and 4-hours ramp down time, 63% of PL intensity was maintained even after the oxidation process at 530°C.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121195222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Room-temperature vacuum packaging using ultrasonic bonding with Cu compliant rim 室温真空包装采用超声键合与铜兼容的边缘
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886183
R. Takigawa, Hiroki Kawano, T. Shuto, A. Ikeda, T. Takao, T. Asano
{"title":"Room-temperature vacuum packaging using ultrasonic bonding with Cu compliant rim","authors":"R. Takigawa, Hiroki Kawano, T. Shuto, A. Ikeda, T. Takao, T. Asano","doi":"10.1109/LTB-3D.2014.6886183","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886183","url":null,"abstract":"In this study, we demonstrate room-temperature vacuum sealing by combining Cu compliant rim with ultrasonic assist.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114289494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Brick-like based KGDs self-assembly and connection technologies for 3DIC integration 面向3DIC集成的基于类砖的KGDs自组装与连接技术
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886144
Yu-Cheng Fan, Chih-Kang Lin, Wei-Syuan Chen, Yin-Te Hsieh
{"title":"Brick-like based KGDs self-assembly and connection technologies for 3DIC integration","authors":"Yu-Cheng Fan, Chih-Kang Lin, Wei-Syuan Chen, Yin-Te Hsieh","doi":"10.1109/LTB-3D.2014.6886144","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886144","url":null,"abstract":"In this paper, we proposed a brick-like based KGDs (known good die) self-assembly and connection technologies for 3DIC (three dimensional integrated circuit) integration. We solved the inflexible connection problem and achieved effectively 3DIC integration.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114528303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New bonding material for power devices with high bonding strength for operating high temperature 大功率器件用新型粘接材料，高温工作时粘接强度高
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886188
S. Sekine, Ryuji Kimura, K. Okada, H. Shindo, T. Ooi, U. Itoh
{"title":"New bonding material for power devices with high bonding strength for operating high temperature","authors":"S. Sekine, Ryuji Kimura, K. Okada, H. Shindo, T. Ooi, U. Itoh","doi":"10.1109/LTB-3D.2014.6886188","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886188","url":null,"abstract":"In the metallization technology for power electronic device, it has been required to develop new material for operating high-temperature at 300 °C and interconnection with high bonding strength. We have developed new method to fabricate fine metal alloy particles with narrow distribution of particle size from 0.5 to 10μm. We called it as Nanomized method. The fine particles are composed of uniform structure dispersed metal alloy in nano-scale level and do not include void in the particle. We produced bonding material from the mixture of Cu particles and Sn-based nano composite solder particles. The bonding strength of die chip on Al electrode reached 80 MPa as a top data, 50 MPa in average after 500 thermal cycles from -40 to 250 °C.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130319541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Room-temperature wafer bonding with smooth Au thin film in ambient air using Ar RF plasma activation 室温下使用氩射频等离子体激活与光滑金薄膜的晶圆键合
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886165
K. Okumura, E. Higurashi, T. Suga, K. Hagiwara
{"title":"Room-temperature wafer bonding with smooth Au thin film in ambient air using Ar RF plasma activation","authors":"K. Okumura, E. Higurashi, T. Suga, K. Hagiwara","doi":"10.1109/LTB-3D.2014.6886165","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886165","url":null,"abstract":"Quartz glass wafers with smooth Au thin film (thickness: 30 nm, surface roughness Ra: 0.34 nm) were successfully bonded in ambient air at room temperature after Ar RF plasma activation process. The room temperature bonded glass wafers without any heat treatment showed a sufficiently high die-shear strength of 47~70 MPa. The application of this process to heterogeneous integration of GaAs on SiC enables improved thermal management in high power semiconductor lasers.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129994406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Surface activated bonding method applied in MEMS pressure sensor with TSV structures 表面活化键合方法在TSV结构MEMS压力传感器中的应用
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886177
Zijian Wu, Yinghui Wang, Jian Cai, Qian Wang, T. Suga
{"title":"Surface activated bonding method applied in MEMS pressure sensor with TSV structures","authors":"Zijian Wu, Yinghui Wang, Jian Cai, Qian Wang, T. Suga","doi":"10.1109/LTB-3D.2014.6886177","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886177","url":null,"abstract":"As one of the traditional bonding method, thermo-compression bonding has the problem of process incompatibility and mechanical instability due to the high bonding temperature. Surface activated bonding (SAB) method can solve such problems by a very low bonding temperature. Oxide layer and contaminations for the normal surface are removed by specific method such as FAB treatment or plasma treatment. When two activated surfaces are brought into contact, clean surfaces are bonded together by atomic force. In this paper, the design and the fabrication of pressure sensor chip with TSV structures would be given, and the details of the surface activated bonding would be given. The results of the bonding would be carefully studied. The SAB method would be compared with thermo-compression bonding in some aspects such as bonding strength, bonding interface condition, etc.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125520314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermocouples fabricated on microfluidic trench sidewall capped with film 薄膜覆盖微流控沟槽侧壁制备热电偶
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886176
M. Shibata, Takahiro Yamaguchi, S. Kumagai, M. Sasaki
{"title":"Thermocouples fabricated on microfluidic trench sidewall capped with film","authors":"M. Shibata, Takahiro Yamaguchi, S. Kumagai, M. Sasaki","doi":"10.1109/LTB-3D.2014.6886176","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886176","url":null,"abstract":"Thermocouples on the trench sidewall fronting on the flow is fabricated by applying 3D photolithography. Without the flow, the thermocouple on the trench sidewall shows the same temperature with that on the wafer top surface apart from the channel. When the hot gas starts to flow, the thermocouple on the sidewall shows the response increasing its open voltage. The local temperature is measured accurately.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129020036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low temperature metal bonding for 3D and power device packaging 用于3D和功率器件封装的低温金属粘接
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886196
L. Di Cioccio, Y. Beilliard, S. Mermoz, R. Estevez, P. Coudrain, S. Moreau, J. Widiez
{"title":"Low temperature metal bonding for 3D and power device packaging","authors":"L. Di Cioccio, Y. Beilliard, S. Mermoz, R. Estevez, P. Coudrain, S. Moreau, J. Widiez","doi":"10.1109/LTB-3D.2014.6886196","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886196","url":null,"abstract":"Low temperature copper-copper direct bonding at ambient air on plain and patterned surfaces was developed at CEA LETI. In this paper we will review this bonding in terms of simulation models, process technology, electrical characterization and reliability. Wafer to wafer, die to wafer and self-assembly will be analyzed.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123384440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wafer-level packaging for harsh environment application 适用于恶劣环境的晶圆级封装
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886178
C. Jia, J. Bardong, C. Gruber, A. Kenda, M. Kraft
{"title":"Wafer-level packaging for harsh environment application","authors":"C. Jia, J. Bardong, C. Gruber, A. Kenda, M. Kraft","doi":"10.1109/LTB-3D.2014.6886178","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886178","url":null,"abstract":"A wafer-level chip-scale packaging scheme that can withstand temperatures of 600°C and above in long-term operation is proposed. The package comprises a SOI case and a cap wafer. In the device layer of the SOI wafer, flexible springs are formed to fix target chips inside the case, so that the influence of thermal stress can be minimized. The two components are joined together through wafer bonding process under vacuum condition. Electric connection is established through Pt metallized via in SOI. Initial test results confirm the feasibility of the method.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114423353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Three dimensional dynamic random access memory 三维动态随机存取存储器
2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI: 10.1109/LTB-3D.2014.6886142
T. Kirihata
{"title":"Three dimensional dynamic random access memory","authors":"T. Kirihata","doi":"10.1109/LTB-3D.2014.6886142","DOIUrl":"https://doi.org/10.1109/LTB-3D.2014.6886142","url":null,"abstract":"We review high-density embedded 3D DRAM cache, industry 3D stacked DDR3 and wide IO mobile DRAM along with more recent Hybrid-Memory Cube (HMC) and High-Bandwidth Memory (HBM).","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114656454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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