AlInAs氧化电流约束层III-V/SOI杂化光子器件高温工艺研究

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI:10.1109/LTB-3D.2014.6886156

Y. Hayashi, Jun-ichi Suzuki, Y. Kuno, Joonhyun Kang, T. Amemiya, N. Nishiyama, S. Arai

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摘要

为了实现用于III-V/SOI混合光子器件的AlInAs氧化电流约束结构，研究了氧化条件。在4小时的升温时间和4小时的降温时间下，即使在530℃的氧化过程中，也能保持63%的PL强度。

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Investigation of high temperature process for III-V/SOI hybrid photonic devices with AlInAs oxidation current confinement layer

In order to realize AlInAs oxidation current confinement structures for III-V/SOI hybrid photonic devices, oxidation condition was investigated. With 4-hours ramp up time and 4-hours ramp down time, 63% of PL intensity was maintained even after the oxidation process at 530°C.

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2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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