室温下使用氩射频等离子体激活与光滑金薄膜的晶圆键合

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI:10.1109/LTB-3D.2014.6886165

K. Okumura, E. Higurashi, T. Suga, K. Hagiwara

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引用次数: 6

摘要

采用氩射频等离子体活化工艺，在室温环境空气中成功结合了光滑的Au薄膜(厚度为30 nm，表面粗糙度Ra为0.34 nm)。未经热处理的室温粘结玻璃片具有足够高的模剪强度，达到47~70 MPa。将该工艺应用于GaAs在SiC上的异质集成，可以改善高功率半导体激光器的热管理。

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Room-temperature wafer bonding with smooth Au thin film in ambient air using Ar RF plasma activation

Quartz glass wafers with smooth Au thin film (thickness: 30 nm, surface roughness Ra: 0.34 nm) were successfully bonded in ambient air at room temperature after Ar RF plasma activation process. The room temperature bonded glass wafers without any heat treatment showed a sufficiently high die-shear strength of 47~70 MPa. The application of this process to heterogeneous integration of GaAs on SiC enables improved thermal management in high power semiconductor lasers.

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来源期刊

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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