M. Wu, J. Moulin, S. Lani, G. Hallais, C. Renard, A. Bosseboeuf
{"title":"晶圆级真空封装吸气剂膜集成中Au/Ti的互扩散热活化","authors":"M. Wu, J. Moulin, S. Lani, G. Hallais, C. Renard, A. Bosseboeuf","doi":"10.1109/LTB-3D.2014.6886174","DOIUrl":null,"url":null,"abstract":"Diffusion of Ti through a very thin Au cap layer has been studied at different temperatures and times by SEM, AFM, EDX, RBS and other techniques. Results show that Au/Ti with an ultrathin Au layer is a promising getter material for wafer-level vacuum packaging with an activation temperature ≤300°C.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"11 7","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Thermal activation of Au/Ti by interdiffusion for getter film integration in wafer-level vacuum packaging\",\"authors\":\"M. Wu, J. Moulin, S. Lani, G. Hallais, C. Renard, A. Bosseboeuf\",\"doi\":\"10.1109/LTB-3D.2014.6886174\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Diffusion of Ti through a very thin Au cap layer has been studied at different temperatures and times by SEM, AFM, EDX, RBS and other techniques. Results show that Au/Ti with an ultrathin Au layer is a promising getter material for wafer-level vacuum packaging with an activation temperature ≤300°C.\",\"PeriodicalId\":123514,\"journal\":{\"name\":\"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"volume\":\"11 7\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LTB-3D.2014.6886174\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LTB-3D.2014.6886174","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermal activation of Au/Ti by interdiffusion for getter film integration in wafer-level vacuum packaging
Diffusion of Ti through a very thin Au cap layer has been studied at different temperatures and times by SEM, AFM, EDX, RBS and other techniques. Results show that Au/Ti with an ultrathin Au layer is a promising getter material for wafer-level vacuum packaging with an activation temperature ≤300°C.