晶圆级真空封装吸气剂膜集成中Au/Ti的互扩散热活化

M. Wu, J. Moulin, S. Lani, G. Hallais, C. Renard, A. Bosseboeuf
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引用次数: 1

摘要

利用SEM、AFM、EDX、RBS等技术研究了Ti在不同温度和时间下通过极薄Au帽层的扩散。结果表明,具有超薄Au层的Au/Ti是一种很有前途的激发温度≤300℃的晶圆级真空封装吸气材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermal activation of Au/Ti by interdiffusion for getter film integration in wafer-level vacuum packaging
Diffusion of Ti through a very thin Au cap layer has been studied at different temperatures and times by SEM, AFM, EDX, RBS and other techniques. Results show that Au/Ti with an ultrathin Au layer is a promising getter material for wafer-level vacuum packaging with an activation temperature ≤300°C.
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