Ne束辐照光滑硅片的室温直接键合

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI:10.1109/LTB-3D.2014.6886163

Y. Kurashima, A. Maeda, H. Takagi

{"title":"Ne束辐照光滑硅片的室温直接键合","authors":"Y. Kurashima, A. Maeda, H. Takagi","doi":"10.1109/LTB-3D.2014.6886163","DOIUrl":null,"url":null,"abstract":"We found the improvement of the bonding strength by surface smoothing effect of Ne fast-atom-beam (FAB). Surface roughness of a Si wafer decreased from 0.40 to 0.17 nm rms by applying the Ne FAB etching of 30 nm depth. The bonding strength was largely improved by Ne FAB surface smoothing and finally became equivalent to Si bulk strength.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Room temperature direct bonding of Si wafers smoothed by Ne beam irradiation\",\"authors\":\"Y. Kurashima, A. Maeda, H. Takagi\",\"doi\":\"10.1109/LTB-3D.2014.6886163\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We found the improvement of the bonding strength by surface smoothing effect of Ne fast-atom-beam (FAB). Surface roughness of a Si wafer decreased from 0.40 to 0.17 nm rms by applying the Ne FAB etching of 30 nm depth. The bonding strength was largely improved by Ne FAB surface smoothing and finally became equivalent to Si bulk strength.\",\"PeriodicalId\":123514,\"journal\":{\"name\":\"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LTB-3D.2014.6886163\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LTB-3D.2014.6886163","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

我们发现，Ne快原子束(FAB)的表面平滑效应提高了键合强度。采用30 nm深度的Ne FAB刻蚀，硅片表面粗糙度由0.40 nm rms降至0.17 nm rms。通过Ne - FAB表面平滑处理，结合强度得到很大程度的提高，最终达到与Si体强度相当的水平。

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Room temperature direct bonding of Si wafers smoothed by Ne beam irradiation

We found the improvement of the bonding strength by surface smoothing effect of Ne fast-atom-beam (FAB). Surface roughness of a Si wafer decreased from 0.40 to 0.17 nm rms by applying the Ne FAB etching of 30 nm depth. The bonding strength was largely improved by Ne FAB surface smoothing and finally became equivalent to Si bulk strength.

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2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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