用表面活化键合法直接键合Ge/GaAs制备高效III-V型多结太阳能电池

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI:10.1109/LTB-3D.2014.6886189

Genki Kono, M. Fujino, Daiji Yamashita, Kentaroh Watanabe, M. Sugiyama, Y. Nakano, T. Suga

{"title":"用表面活化键合法直接键合Ge/GaAs制备高效III-V型多结太阳能电池","authors":"Genki Kono, M. Fujino, Daiji Yamashita, Kentaroh Watanabe, M. Sugiyama, Y. Nakano, T. Suga","doi":"10.1109/LTB-3D.2014.6886189","DOIUrl":null,"url":null,"abstract":"Ge/GaAs wafers have been bonded by surface activated bonding. TEM observation of the bonded interface shows that amorphous layer with thickness of about 5 nm has been formed. I-V characteristic of directly bonded p-Ge/p-GaAs shows diode-like properties. The electrical resistance of the bonded interface has achieved about 0.16 Ωcm2 at 0.1 V.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Directly bonded Ge/GaAs by surface activated bonding for high efficiency III–V multi-junction solar cells\",\"authors\":\"Genki Kono, M. Fujino, Daiji Yamashita, Kentaroh Watanabe, M. Sugiyama, Y. Nakano, T. Suga\",\"doi\":\"10.1109/LTB-3D.2014.6886189\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ge/GaAs wafers have been bonded by surface activated bonding. TEM observation of the bonded interface shows that amorphous layer with thickness of about 5 nm has been formed. I-V characteristic of directly bonded p-Ge/p-GaAs shows diode-like properties. The electrical resistance of the bonded interface has achieved about 0.16 Ωcm2 at 0.1 V.\",\"PeriodicalId\":123514,\"journal\":{\"name\":\"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LTB-3D.2014.6886189\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LTB-3D.2014.6886189","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

采用表面活化键合方法对Ge/GaAs晶圆进行了键合。透射电镜观察表明，结合界面形成了厚度约为5 nm的非晶层。直接键合p-Ge/p-GaAs的I-V特性显示出类似二极管的特性。在0.1 V时，键合界面的电阻达到约0.16 Ωcm2。

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Directly bonded Ge/GaAs by surface activated bonding for high efficiency III–V multi-junction solar cells

Ge/GaAs wafers have been bonded by surface activated bonding. TEM observation of the bonded interface shows that amorphous layer with thickness of about 5 nm has been formed. I-V characteristic of directly bonded p-Ge/p-GaAs shows diode-like properties. The electrical resistance of the bonded interface has achieved about 0.16 Ωcm2 at 0.1 V.

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2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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