等离子体激活键合制备III-V /SOI晶圆去除III-V层后Si波导的光传播特性

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI:10.1109/LTB-3D.2014.6886159

Jun-ichi Suzuki, Y. Hayashi, Y. Kuno, Joonhyun Kang, T. Amemiya, N. Nishiyama, S. Arai

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摘要

对III-V/Si直接键合后的Si波导质量进行了评价，其传输损耗达到4.0 dB/cm，与未进行直接键合的波导等效。

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Light propagation properties of Si waveguides after removing III–V layer on a III–V/SOI wafer fabricated by plasma activated bonding

Qualities of Si waveguides after III-V/Si direct bonding process was evaluated, and propagation loss of 4.0 dB/cm was achieved, which is equivalent to the value of waveguides not including direct bonding process.

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2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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