Mechanical grinding of Au/SiO2 hybrid-bonded substrates for 3D integrated image sensors

Abstract

Mechanical grinding is utilized to thin the backside Si layer of Au/SiO2 hybrid-bonded substrates. Due to the high bond strength after the surface activation treatment, the Si layer thickness could be reduced to 35 μm without chipping. The proposed approach is highly promising for the fabrication of three-dimensional integrated image sensors.