Annealing characteristics of p+-Si/n-4H-SiC junctions by using surface-activated bonding

Abstract

The effects of annealing on p+-Si/n-4H-SiC heterojunctons fabricated by using surface-activated bonding (SAB) were investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. I-V characteristics were improved and the flat-band voltages extracted from C-V characteristics were smaller by annealing at higher temperatures.