表面活化键合p+-Si/n-4H-SiC结的退火特性

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-02-06 DOI:10.1109/LTB-3D.2014.6886193

S. Nishida, J. Liang, T. Hayashi, M. Morimoto, N. Shigekawa, M. Arai

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引用次数: 3

摘要

通过测量电流电压(I-V)和电容电压(C-V)，研究了退火对表面活化键合(SAB)制备的p+-Si/n-4H-SiC异质结的影响。在较高的温度下退火可以改善I-V特性，并且从C-V特性中提取的平带电压更小。

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Annealing characteristics of p+-Si/n-4H-SiC junctions by using surface-activated bonding

The effects of annealing on p+-Si/n-4H-SiC heterojunctons fabricated by using surface-activated bonding (SAB) were investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. I-V characteristics were improved and the flat-band voltages extracted from C-V characteristics were smaller by annealing at higher temperatures.

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来源期刊

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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