热电TiZrNiSn薄膜的接触层改进

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI:10.1109/LTB-3D.2014.6886168

W. Wunderlich, Y. Matsumura

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引用次数: 0

摘要

半heusler合金(Ti,Zr)NiSn是一种具有较大塞贝克系数的热电材料[1-6]。磁控溅射溅射薄膜沉积在Cu上比沉积在Fe、Ni或Si上具有更好的性能。通过带结构计算解释了这种界面现象，并为3d打印机的加工提供了指导。

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Improvement of thermoelectric TiZrNiSn thin films by contact layers

The Half-Heusler alloy (Ti,Zr)NiSn has been reported [1-6] as one of the thermoelectric (TE) materials with large Seebeck coefficient. Thin films sputtered by magnetron-sputtering have better properties when they are deposited on Cu, rather than Fe, Ni or Si. This interface phenomenon is explained by band-structure calculations and guidelines for 3D-printer processing are provided.

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2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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