退火对混合串联太阳能电池GaAs/Si键合界面的影响

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-08-28 DOI:10.1109/LTB-3D.2014.6886190

L. Chai, J. Liang, S. Nishida, M. Morimoto, N. Shigekawa

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引用次数: 0

摘要

研究了退火对III-V-on-Si杂化串联太阳能电池键合界面的影响。在退火前，在界面处观察到非晶层。我们还研究了退火对n+-GaAs/n++-Si和p+-GaAs/n++-Si结电流-电压特性的影响。

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Effects of annealing on GaAs/Si bonding interfaces for hybrid tandem solar cells

Effects of annealing on bonding interfaces of III-V-on-Si hybrid tandem solar cells were investigated. We observed amorphous layer at the interfaces prior to the annealing. We also investigated the effects of the annealing on the current-voltage characteristics of n⁺-GaAs/n⁺⁺-Si and p⁺-GaAs/n⁺⁺-Si junctions.

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来源期刊

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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