InAs/GaAs量子点激光器在SOI衬底上的金属条键合

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI:10.1109/LTB-3D.2014.6886157

Yuan-Hsuan Jhang, K. Tanabe, S. Iwamoto, Y. Arakawa

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引用次数: 1

摘要

我们利用金属条纹晶圆键合技术，在具有硅肋结构的绝缘体硅衬底上展示了InAs/GaAs量子点激光器。激光的阈值电流密度为880 A/cm2，室温下的光谱显示激光波长约为1.3 μm。

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InAs/GaAs quantum dot lasers metal-stripe-bonded onto SOI substrate

We demonstrate InAs/GaAs quantum dot lasers on silicon-on-insulator substrate with silicon rib structures by metal-stripe wafer bonding technology. The threshold current density of the bonded laser is 880 A/cm2, and the spectrum shows the lasing wavelength around 1.3 μm at room temperature.

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来源期刊

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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