将金属-金属键结合到10微米及以下的红外焦平面阵列应用的3D互连技术的缩放

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI:10.1109/LTB-3D.2014.6886146

D. Temple, E. Vick, M. Lueck, D. Malta

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引用次数: 2

摘要

我们将回顾在功能红外成像系统中依赖低温金属-金属键的高密度区域阵列3D集成技术的实施现状，并将讨论该技术的缩放以兼容用于10微米和更小像素的焦平面阵列的读出集成电路。未来的研究需要在这个快速增长的应用领域将被确定。

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Scaling of 3D interconnect technology incorporating metal-metal bonds to pitches of 10 microns and below for infrared focal plane array applications

We will review the status of the implementation of high density area array 3D integration technology relying on low temperature metal-metal bonds in functional infrared imaging systems, and will discuss scaling of the technology for compatibility with readout integrated circuits for focal plane arrays with 10 micron and smaller pixels. Future research needs in this rapidly growing application area will be identified.

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2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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