Metal-assisted hermetic wafer-level packaging

Dany Chagnon, D. Işık, P. Levesque, François Lewis, Marie-Eve Caza, X. Le, J. Poirier, D. Michel, R. Larger, O. Moutanabbir
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Abstract

This work main focus is the use of Gold thermocompression and gold-tin transient liquid phase bonding to achieve a hermetic wafer-level packaging. Herein, we describe the major advantages and difficulties that characterized these two bonding processes at design and materials levels. We also provide detailed in- and ex- situ studies of morphological and thermal stabilities of the multi-layer stacks utilized to prepare the wafers to be bonded. These investigations also set the ground to optimize the bonding conditions in order to enable high-quality bonding interfaces.
金属辅助密封晶圆级封装
本工作的主要重点是利用金热压和金锡瞬态液相键合来实现密封晶圆级封装。在这里,我们描述了这两种粘接工艺在设计和材料水平上的主要优点和困难。我们还提供了用于制备待粘合晶圆的多层堆叠的形态学和热稳定性的详细的原位和非原位研究。这些研究也为优化粘合条件奠定了基础,以实现高质量的粘合界面。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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