Micromechanical view of heterointegration by wafer bonding and layer splitting

Abstract

An overview of the micromechanical issues of heterointegration by wafer bonding and layer exfoliation is presented for the systems of AlN on sapphire and epitaxial Si_1-xGe_x and Ge-free bi-axially strained sSOI. AlN layers grown epitaxially on sapphire were implanted with hydrogen ions at 50 keV with various fluences ranging from 0.5 × 10¹⁷cm^-2 to 3 × 10¹⁷cm^-2 in order to optimize the experimental conditions for bonding and AlN thin layer transfer using the ion-cut process.