晶圆键合和层裂异质集成的微观力学观点

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI:10.1109/LTB-3D.2014.6886169

H. Baumgart, M. Mamun, A. Elmustafa

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引用次数: 0

摘要

综述了蓝宝石上AlN、外延Si1-xGex和无ge双轴应变sSOI的晶圆键合和层剥离异质集成的微观力学问题。在50 keV下注入0.5 × 1017cm-2 ~ 3 × 1017cm-2影响的氢离子，以优化离子切割工艺在蓝宝石表面外延生长AlN薄层的键合和转移实验条件。

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Micromechanical view of heterointegration by wafer bonding and layer splitting

An overview of the micromechanical issues of heterointegration by wafer bonding and layer exfoliation is presented for the systems of AlN on sapphire and epitaxial Si_1-xGe_x and Ge-free bi-axially strained sSOI. AlN layers grown epitaxially on sapphire were implanted with hydrogen ions at 50 keV with various fluences ranging from 0.5 × 10¹⁷cm^-2 to 3 × 10¹⁷cm^-2 in order to optimize the experimental conditions for bonding and AlN thin layer transfer using the ion-cut process.

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来源期刊

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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