氮化镓对h-BN的释放和转移装置技术

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2014-07-15 DOI:10.1109/LTB-3D.2014.6886170

M. Hiroki, K. Kumakura, Y. Kobayashi, T. Akasaka, Hideki Yamamoto, T. Makimoto

{"title":"氮化镓对h-BN的释放和转移装置技术","authors":"M. Hiroki, K. Kumakura, Y. Kobayashi, T. Akasaka, Hideki Yamamoto, T. Makimoto","doi":"10.1109/LTB-3D.2014.6886170","DOIUrl":null,"url":null,"abstract":"We demonstrated the transfer of GaN-devices from sapphire substrates to foreign materials using an h-BN release layer. In LEDs transferred onto indium sheets, no discernible degradation of the light emission performance occurred. Remarkably, the self-heating effect was suppressed in HEMTs transferred to copper plates because of improved heat dissipation.","PeriodicalId":123514,"journal":{"name":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"GaN on h-BN technology for release and transfer of nitride devices\",\"authors\":\"M. Hiroki, K. Kumakura, Y. Kobayashi, T. Akasaka, Hideki Yamamoto, T. Makimoto\",\"doi\":\"10.1109/LTB-3D.2014.6886170\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrated the transfer of GaN-devices from sapphire substrates to foreign materials using an h-BN release layer. In LEDs transferred onto indium sheets, no discernible degradation of the light emission performance occurred. Remarkably, the self-heating effect was suppressed in HEMTs transferred to copper plates because of improved heat dissipation.\",\"PeriodicalId\":123514,\"journal\":{\"name\":\"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-07-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LTB-3D.2014.6886170\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LTB-3D.2014.6886170","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们演示了使用h-BN释放层将gan器件从蓝宝石衬底转移到外来材料。在转移到铟片上的led中，没有发生明显的光发射性能下降。值得注意的是，由于改善了散热，hemt转移到铜板上的自热效应受到抑制。

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GaN on h-BN technology for release and transfer of nitride devices

We demonstrated the transfer of GaN-devices from sapphire substrates to foreign materials using an h-BN release layer. In LEDs transferred onto indium sheets, no discernible degradation of the light emission performance occurred. Remarkably, the self-heating effect was suppressed in HEMTs transferred to copper plates because of improved heat dissipation.

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来源期刊

2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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