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2003 International Symposium on Compound Semiconductors最新文献

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Temperature-dependent orientation of intraband dipoles of self-assembled InAs/GaAs quantum dot ensembles 自组装InAs/GaAs量子点系综带内偶极子的温度依赖取向
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239922
Zhonghui Chen, Eui-Tae Kim, A. Madhukar
{"title":"Temperature-dependent orientation of intraband dipoles of self-assembled InAs/GaAs quantum dot ensembles","authors":"Zhonghui Chen, Eui-Tae Kim, A. Madhukar","doi":"10.1109/ISCS.2003.1239922","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239922","url":null,"abstract":"The temperature dependence of the orientation of intraband-transition-induced dipoles in self-assembled InAs/GaAs(001) quantum dots (QDs) embedded in n-i(QDs)-n configuration was reported.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115364458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ion implantation for creating room temperature ferromagnetism in wide bandgap semiconductors 宽禁带半导体室温铁磁性的离子注入
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239930
S. Pearton, C. Abernathy, F. Ren, D. Norton, A. Hebard, J. Zavada, R. Wilson
{"title":"Ion implantation for creating room temperature ferromagnetism in wide bandgap semiconductors","authors":"S. Pearton, C. Abernathy, F. Ren, D. Norton, A. Hebard, J. Zavada, R. Wilson","doi":"10.1109/ISCS.2003.1239930","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239930","url":null,"abstract":"We summarize recent progress in creating dilute magnetic semiconductors such as (Ga,Mn)N, (Ga,Mn)P, (Zn,Mn)O, (Si,Mn)C, and (Zn,Mn)SiGeN/sub 2/ exhibiting room temperature ferromagnetism through the use of ion implantation, the origins of the magnetism and its potential applications in novel device such as spin-polarized light emitters and spin field effect transistors.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122746732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Determination of subband energy levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering 双量子阱AlGaAs激光器子带能级的光反射和自激电子拉曼散射测定
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239954
W. Susaki, S. Ukawa, N. Ohno, H. Takeuchi, Y. Yamamoto, R. Hattori, A. Shima, Y. Mihashi
{"title":"Determination of subband energy levels of double quantum well AlGaAs lasers by photoreflectance and self-excited electron Raman scattering","authors":"W. Susaki, S. Ukawa, N. Ohno, H. Takeuchi, Y. Yamamoto, R. Hattori, A. Shima, Y. Mihashi","doi":"10.1109/ISCS.2003.1239954","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239954","url":null,"abstract":"In this paper, subband energy levels of an AlGaAs separate-confinement-hetrostructure (SCH) double quantum well (DQW) layer are determined by photoreflectance (PR) and compared with those determined by the self-excited ERS of lasers fabricated from the same DQW structure but with different waveguide thickness. Subband energy levels determined by both measurements are in a good agreement.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130940259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microstructure of polycrystalline GaN grown on silica glass by ECR-MBE ECR-MBE在硅玻璃上生长多晶GaN的微观结构
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239888
T. Araki, T. Ueno, S. Ueta, Y. Nanishi
{"title":"Microstructure of polycrystalline GaN grown on silica glass by ECR-MBE","authors":"T. Araki, T. Ueno, S. Ueta, Y. Nanishi","doi":"10.1109/ISCS.2003.1239888","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239888","url":null,"abstract":"We have investigated GaN grown on silica glass using TEM. Polycrystalline GaN grown without nitridation shows columnar structure with distributed growth orientation, in which threading dislocation density is relatively low. On the other hand, polycrystalline GaN grown with nitridation has columnar structure with uniform c-axis orientation. However, a high density of threading dislocation is observed.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126383473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of thin GaAs cap layer on optical properties of InAs/InGaAs/InP quantum dot 薄GaAs帽层对InAs/InGaAs/InP量子点光学性能的影响
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239939
Kwangmin Park, H. Hwang, H. Lee, Y. J. Jeon, H.M. Cheong, E. Yoon
{"title":"Effects of thin GaAs cap layer on optical properties of InAs/InGaAs/InP quantum dot","authors":"Kwangmin Park, H. Hwang, H. Lee, Y. J. Jeon, H.M. Cheong, E. Yoon","doi":"10.1109/ISCS.2003.1239939","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239939","url":null,"abstract":"We have studied the influence of thin GaAs capping layer (5-10 monolayers) on optical properties of InAs QDs. After the growth of thin GaAs capping layer, the 70 nm thick top InGaAs capping layer was deposited at 570 /sup o/C or 610 /sup o/C. The insertion of thin GaAs cap layer on QDs led to blue shift of peak of photoluminescence (PL). In addition, full width at half maximum (FWHM) of the PL peak decreases from 35 mev to 20 mev by inserting 10 ML GaAs layer.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127823174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nanoscale characterization and mitigation of defects in nitride semiconductors 氮化半导体中纳米级缺陷的表征和缓解
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239915
E. Yu, E. J. Miller, D. Schaadt, B. Simpkins
{"title":"Nanoscale characterization and mitigation of defects in nitride semiconductors","authors":"E. Yu, E. J. Miller, D. Schaadt, B. Simpkins","doi":"10.1109/ISCS.2003.1239915","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239915","url":null,"abstract":"Epitaxially grown Group III-nitride semiconductor materials are typically characterized by high concentrations of point and extended defects. Scanning probe techniques, atomic force microscopy (AFM), conductive atomic force microscopy (c-AFM), scanning Kelvin probe force microscopy (SKPM), and scanning capacitance microscopy (SCM) to characterise the structural and electronic properties of AlGaN/GAN heterostructure field-effect transistor and n-GaN Schotty diodes.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"60 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117222100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical detection of coherent GHz phonon generation in a high power GaN/AlGaN microwave FET 高功率GaN/AlGaN微波场效应管中相干GHz声子产生的光学检测
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239961
Jung-Hoon Song, Qiang Zhang, W. Patterson, A. Nurmikko, M. Uren, K. Hilton, R. Balmer, T. Martin
{"title":"Optical detection of coherent GHz phonon generation in a high power GaN/AlGaN microwave FET","authors":"Jung-Hoon Song, Qiang Zhang, W. Patterson, A. Nurmikko, M. Uren, K. Hilton, R. Balmer, T. Martin","doi":"10.1109/ISCS.2003.1239961","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239961","url":null,"abstract":"The time-varying electron density in the channel of a microwave GaN/AlGaN FET gives raise to GHz coherent phonon generation due to the screening of the giant piezoelectric fields, which we measure optically. Such propagating nonthermal channels of energy release may be of relevance to future high power devices.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132582743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of low-temperature buffer layer on the quality of RF magnetron sputtering grown ZnO/Si films 低温缓冲层对射频磁控溅射生长ZnO/Si薄膜质量的影响
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239935
Il-soo Kim, S. Jeong, Sang-Sub Kim, Byung-Teak Lee
{"title":"Effects of low-temperature buffer layer on the quality of RF magnetron sputtering grown ZnO/Si films","authors":"Il-soo Kim, S. Jeong, Sang-Sub Kim, Byung-Teak Lee","doi":"10.1109/ISCS.2003.1239935","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239935","url":null,"abstract":"Results of detailed characterization indicate that the PL emission and the microstructure of ZnO/Si films grown by RF magnetron sputtering are significantly improved by increasing growth temperature and inserting low temperature buffer layer.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132873609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical characteristics of InAsN/GaAs quantum dots emitting at 1.3 /spl mu/m 发射速度为1.3 /spl mu/m的InAsN/GaAs量子点的光学特性
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239910
Y. Jang, N. Kim, K. Park, W. Jeong, J.W. Jang, D. Lee
{"title":"Optical characteristics of InAsN/GaAs quantum dots emitting at 1.3 /spl mu/m","authors":"Y. Jang, N. Kim, K. Park, W. Jeong, J.W. Jang, D. Lee","doi":"10.1109/ISCS.2003.1239910","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239910","url":null,"abstract":"We present optical characterstics of InAsN/GaAs QD samples that contain a small amount of nitrogen inside InAs QD and emit a narrow photoluminescence (PL) signal at 1.3 /spl mu/m . The small addition of nitrogen into an InAs layer lowers the energy gap and at the same time decreases the lattice constant.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128611825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrical and optical activation studies of Si-implanted Al/sub x/Ga/sub 1-x/N by Hall-effect and photoluminescence measurements 利用霍尔效应和光致发光研究si注入Al/sub -x/ Ga/sub - 1-x/N的电和光学活化
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239901
Mee-Yi Ryu, E. A. Chitwood, Y. Yeo, R. Hengehold, T. Steiner
{"title":"Electrical and optical activation studies of Si-implanted Al/sub x/Ga/sub 1-x/N by Hall-effect and photoluminescence measurements","authors":"Mee-Yi Ryu, E. A. Chitwood, Y. Yeo, R. Hengehold, T. Steiner","doi":"10.1109/ISCS.2003.1239901","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239901","url":null,"abstract":"Ion-implanted Al/sub x/Ga/sub 1-x/N has been studied much less compared to GaN, and thus very little is known about implanted Al/sub x/Ga/sub 1-x/N. Therefore, systematic electrical and optical activation studies of Si-implanted Al/sub x/Ga/sub 1-x/N have been made as a function of ion dose, anneal temperature, and anneal time.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134018304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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