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2003 International Symposium on Compound Semiconductors最新文献

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Correlations between In composition and tertiarybutylarsine (TBAs) flow rate in InGaNAs/GaN multiple quantum well by metalorganic chemical vapor deposition 金属有机化学气相沉积InGaNAs/GaN多量子阱中In组成与TBAs流速的关系
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239918
H. Na, Hyun Jin Kim, Soon‐Yong Kwon, E. Yoon, C. Sone, Yongjo Park
{"title":"Correlations between In composition and tertiarybutylarsine (TBAs) flow rate in InGaNAs/GaN multiple quantum well by metalorganic chemical vapor deposition","authors":"H. Na, Hyun Jin Kim, Soon‐Yong Kwon, E. Yoon, C. Sone, Yongjo Park","doi":"10.1109/ISCS.2003.1239918","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239918","url":null,"abstract":"InGaNAs/GaN MQW structures were grown on GaN/sapphire substrates by low-pressure MOCVD. We investigated the structural and optical properties of InGaNAs MQW and correlation between As concentration and In composition using X-ray diffraction (XRD), transmission electron microscopy (TEM), secondary ion mass spectrometry (SIMS) and photoluminescence (PL) spectra.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131704129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
AlInN as high-index-contrast material for GaN-based optoelectronics 作为氮化镓基光电器件的高折射率对比材料
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239890
J. Carlin, J. Dorsaz, C. Zellweger, S. Gradečak, M. Ilegems
{"title":"AlInN as high-index-contrast material for GaN-based optoelectronics","authors":"J. Carlin, J. Dorsaz, C. Zellweger, S. Gradečak, M. Ilegems","doi":"10.1109/ISCS.2003.1239890","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239890","url":null,"abstract":"High crystalline quality AlInN was grown near lattice-matched to GaN. It shows /spl ap/7% index contrast with GaN. It is thus a promising alternative to AlGaN, as demonstrated by a 20-pairs AlInN/GaN DBR with over 90% reflectivity.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122994022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Milliwatt operation of sapphire based 340 nm UV LEDs with quaternary AlInGaN quantum wells at room and cryogenic temperatures 基于蓝宝石的340nm紫外光led在室温和低温下的毫瓦工作
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239947
A. Chitnis, J. Zhang, V. Adivarahan, M. Shatalov, S. Rai, S. Wu, J. Sun, V. Mandavilli, M.A. Khan
{"title":"Milliwatt operation of sapphire based 340 nm UV LEDs with quaternary AlInGaN quantum wells at room and cryogenic temperatures","authors":"A. Chitnis, J. Zhang, V. Adivarahan, M. Shatalov, S. Rai, S. Wu, J. Sun, V. Mandavilli, M.A. Khan","doi":"10.1109/ISCS.2003.1239947","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239947","url":null,"abstract":"In this report, the LED structure was grown over basal plane sapphire substrate and consisted of high quality bottom n/sup +/-AlGaN clad layer followed with three pairs of AlInGaN/AlGaN MQW active region. A record optical power of 0.405 mW at 50 mA of dc bias was measured for the packaged LED, which translates to an external quantum efficiency of 0.22%. The electrical and optical characteristics of the AlInGaN LED were then measured over a temperature range from 10K-300K.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124529769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of thermal annealing on GaInNAs QDs grown on GaAs [001] 热退火对GaAs上生长GaInNAs量子点的影响[001]
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239911
A. Nishikawa, Y. G. Hong, C. Tu
{"title":"Effects of thermal annealing on GaInNAs QDs grown on GaAs [001]","authors":"A. Nishikawa, Y. G. Hong, C. Tu","doi":"10.1109/ISCS.2003.1239911","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239911","url":null,"abstract":"The effects of thermal annealing on optical properties of GaInNAs QDs were studied. QD samples were grown on GaAS [001] substrates by gas-source molecular beam epitaxy (GSMBE) equipped with a rf plasma nitrogen source. The PL spectra of GaInNAs QDs with RTA treatment at 600, 700, and 800 /spl deg/c annealing for 10s.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129115530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ferromagnetic heterostructures for semiconductor spintronics 半导体自旋电子学中的铁磁异质结构
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239884
M. Tanaka
{"title":"Ferromagnetic heterostructures for semiconductor spintronics","authors":"M. Tanaka","doi":"10.1109/ISCS.2003.1239884","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239884","url":null,"abstract":"The author studies developments in epitaxial ferromagnetic heterostructures based on semiconductors towards spintronics and also presents a magnetotransport study on ferromagnetic III-V semiconductor heterostructures with high Curie temperature T/sub c/.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125407397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Exfoliation of GaN layers using hydrogen implantation 氢注入法去除氮化镓层
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239928
S. Hayashi, B. Poust, B. Heying, M. Goorsky
{"title":"Exfoliation of GaN layers using hydrogen implantation","authors":"S. Hayashi, B. Poust, B. Heying, M. Goorsky","doi":"10.1109/ISCS.2003.1239928","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239928","url":null,"abstract":"In this paper, the successful exfoliation of 200 nm GaN layers grown on sapphire substrates was achieved usiing H/sub 2//sup +/ implantation and subsequent annealing. We demonstrate that the extent of exfoliation depends not only on the implant dose, but also on the crystallinity of the GaN layer. Extended defects are not uniformally distributed over the wafer, so certain areas showed much more pronounced exfoliation than other areas.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126055136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Progress of Sb-based type-II mid-IR interband cascade lasers sb基ii型中红外带间级联激光器的研究进展
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239980
Rui Q. Yang, C. Hill, B. Yang, John Liu
{"title":"Progress of Sb-based type-II mid-IR interband cascade lasers","authors":"Rui Q. Yang, C. Hill, B. Yang, John Liu","doi":"10.1109/ISCS.2003.1239980","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239980","url":null,"abstract":"In this paper, we report the progress of Sb-based type-II mid-IR interband cascade lasers interms of both high operation temperatures and low threshold current density. The maximum cw operation temperature is readily raised with the fabrication of narrow-stripe lasers. The detailed characteristics of these lasers and updated results are presented.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126498774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nonmagnetic resonant tunneling spin devices 非磁性共振隧道自旋装置
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239886
D. Ting, X. Cartoixà, Y. Chang
{"title":"Nonmagnetic resonant tunneling spin devices","authors":"D. Ting, X. Cartoixà, Y. Chang","doi":"10.1109/ISCS.2003.1239886","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239886","url":null,"abstract":"We report device concepts for creating spin polarized current sources without external magnetic fields, using nonmagnetic semiconductor resonant tunneling structures. These devices contain asymmetric quantum wells where quantized states are spin-split by the Rashba effect, and achieve spin filtering by exploiting the phenomenon that the spin of a resonantly transmitted electron aligns with that of the quasibound state traversed. Achieving significant spin filtering using this approach is difficult because of the intrinsic properties of the spin-split quantum well states: the k/spl par/-dependent spin splitting is typically small and vanishes at the zone center; states with opposite k/spl par/ within a given spin-split subband have opposite spins so that there is no net spin when averaged over the subband. We have developed effective strategies for overcoming these challenges, and proposed a number of new concepts for designing heterostructure based spin devices.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123474749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electron spin splitting in polarization-doped III-nitrides 极化掺杂iii -氮化物中的电子自旋分裂
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239885
V. Litvinov
{"title":"Electron spin splitting in polarization-doped III-nitrides","authors":"V. Litvinov","doi":"10.1109/ISCS.2003.1239885","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239885","url":null,"abstract":"Rashba spin-orbit splitting parameter has been calculated in wurtzite GaN/AlGaN heterostructures for the first time. Despite wide bandgap, the electron spin-split energy in GaN/AlGaN heterostructure is predicted to be comparable to that in InGaAs/GaAs matrial system due to the strong polarization field at the interface and polarization-induced doping.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125293263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Room temperature ferromagnetism in (Zn,Cr) Te (Zn,Cr) Te的室温铁磁性
2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239929
H. Saito, V. Zayets, S. Yamagata, K. Ando
{"title":"Room temperature ferromagnetism in (Zn,Cr) Te","authors":"H. Saito, V. Zayets, S. Yamagata, K. Ando","doi":"10.1109/ISCS.2003.1239929","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239929","url":null,"abstract":"In this paper, ferromagnetic diluted magnetic semiconductors (DMSs) have exchange interaction between sp-carriers and localized d-spins (sp-d exchange interaction). The sp-d exchange interaction can be detected directly only by the magneto-optical measurements such as a magnetic circular dichorism (MCD) spectroscopy. Recently, we confirmed the sp-d exchange interaction in a ferromagnetic Zn/sub 1-x/Cr/sub x/Te (x=0.20) film of which Curie temperature T/sub c/ was 300K.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131693983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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