2003 International Symposium on Compound Semiconductors最新文献

{"title":"Improved performance of mn-thin gate insulating layer formed by ex-situ dry oxi-nitridation process upon GaAs : GaAs-MISFET","authors":"M. Takebe, N. C. Paul, K. Nakamura, M. Tametou, K. Iiyama, S. Takamiya","doi":"10.1109/ISCS.2003.1239987","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239987","url":null,"abstract":"In 2001, the authors demonstrated performance of GaAs MOS-diodes with nm-thin directly oxidated layers fromed by W & ozone process 111. The thin oxide layers are effective in suppressing gate leakage current. However, a MOSFET based on it has hysteresis in current-voltage curves, and a dip in transconductance at a gate voltage around the flatband voltage 121. H. Ikoma et al. showed good influence of nitridation upon oxidated GaAs surfaces [3]. We also demonstrated in 2002 excellent influences of oxi-nitridation (nitrogen plasma treatment after UV & ozone oxidation) of (100) GaAs surfaces, results of which were characterized from view points of 0 S interface structure (observed by E M ) , photoluminescence and electrical performances of MIS diodes 14, 51. The process gives a very flat interface between a fm insulating GaON layer and a GaAs with very little crystallographic disorder. The nitridation, applied to an oxidated GaAs surface, improves the photoluminescence intensity, decreases a leakage current, and improves C-V characteristics. Figure 1 shows C-V curves of MIS diodes with nm-thin 8 hrs oxidated layer (a) and 8 hrs-nitridated-after-8 hrsoxidation layer (b), respectively. The nitridation improves Schottky barrier height from 0.5 eV to 1.1 eV, and decreases the capacitance in the forward voltage region. We applied this process to forming the gate insulating f h s of GaAs-MISFETs and obtained excellent results which demonstrate reproducibility of the above experiment. We used n W = 3E17Icc. t = 400 nm)/S.LGaAs epitaxial wafer. After gate recess-etching with a gate electrode pattern, oxidation by the W & ozone for 4 hours and 0 to 2 hours nitridation by helicon plasma system at an RF power of 50 W were applied before forming A1 gate electrode. The gate length is about 1 p n (designed). Thickness of the insulator, measured with a monitor wafer is ahout 8 nm. Figure 2 shows drain currents vs. drain voltage of simply 4 hr-oxidated gate MOSFET (a) and the 4 hr-oxi-2 hr-nitridated gate MISFET (b), for drain voltage up and down conditions. The gate insulator formed only the oxidation (a) shows large hysteresis, while that formed by oxi-nitridation (b) shows no hysteresis, and better pinch-off. Figure 3 shows gate voltage dependence of transconductances of the MOSF'ET, 4 hr-oxi-1 hr-nitridated, and 4 hr-oxi-2 hr-nitridated MISFETs. Both of the transconductance and the pinchi-off performances are drastically improved by the nitridation process. The maximum transconductance (110 mS/mm) is obtained at a gate voltage of 1.1 V. Which suggests that the MIS junction has very little defects and extra charges at and near the IS interface. [ l ] T. Sugimura et al., Solid-state Electronics, 43, pp.1571-1576 81999) [Z] K. Iiyama et al., IEEETrans. Electron Devices, 49,11, pp.1856-1862 (20029 [31 H. Ikoma et al., J. Appl. Phys., 85, pp.32343240 (1999) 141 N. C. Paul et al., Cod. Proc. IPRM 2002, Stockholm, pp.217-220 (2002) 1.51 N. C. Paul et al., Jpn. J. Appl.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123050886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"HEMTs with ultrahigh cutoff frequency","authors":"K. Shinohara, Y. Yamashita, A. Endoh, I. Watanabe, K. Hikosaka, T. Mimura, S. Hiyamizu, T. Matsui","doi":"10.1109/ISCS.2003.1239985","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239985","url":null,"abstract":"We succeeded in fabricating ultra-short 30-nm-gate InP-based high electron mobility transistors (HEMTs) with an extremely high current gain cutoff frequency (f/sub T/) of 547 GHz. The superior high-speed performance of our InP-HEMTs was mainly due to their optimized gate-recess structures. We investigated the effect of lateral gate-recess length on f/sub T/ with the asymmetric gate-recess technique, and clarified the impact of source- and drain-side recess lengths on their high-speed performance from the viewpoint of electron velocity and source resistance. We also demonstrated the importance of parasitic resistances, which were no longer negligible in these ultra-high-speed InP-HEMTs.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127808106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors","authors":"K. Kumakura, T. Makimoto, N. Kobayashi, T. Hashizume, T. Fukui, H. Hasegawa","doi":"10.1109/ISCS.2003.1239900","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239900","url":null,"abstract":"In this paper, we have investigated the doping concentration and dislocation density dependence of minority carrier diffusion length parallel to c-axis in Si-doped and Mg-doped GaN by electron beam induced current (EBIC) measurements to optimize the base structure of nitride heterojunction bipolar transistors.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130127794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-performance InGaP power HBT technologies for wireless applications","authors":"T. Oka, K. Fujita, K. Shirakawa, N. Takahashi, Y. Liu, M. Yamashita, H. Kawamura, M. Hasegawa, H. Koh, K. Kagoshima, H. Kijima, K. Sakuno","doi":"10.1109/ISCS.2003.1239974","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239974","url":null,"abstract":"We review the technological features of our InGaP power HBTs for 5GHz wireless application. The features include self-aligned base-contact and base-mesa formation process, small-sized via holes located between multi-finger transistors, and bias and feedback circuits for the reduction of distortion. These technologies improve both gain and linearity, producing higher power added efficiency (PAE) in power amplifiers.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133345723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Precise control of 980 nm pump lasing wavelength","authors":"S. D. Young, A. Kussmaul, W. Liu, S.C. Palmateer","doi":"10.1109/ISCS.2003.1239899","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239899","url":null,"abstract":"In this paper, the laser wavelength is determined by the quantum well alloy composition and thickness. Precise wavelength control thus requires a repeatable epitaxial growth and laser fabrication process.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132860346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and realization of resonant tunneling permeable base transistors","authors":"P. Lindstrom, E. Lind, L.-E. Wemersson","doi":"10.1109/ISCS.2003.1239988","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239988","url":null,"abstract":"Tunneling-based devices are promising in circuit applications due to low-power, high speed and high functionality. A new type of tunneling transistor, the Resonant Tunneling Permeable Base Transistor (RT-PBT) has recently been demonstrated 111. In this device, an embedded metallic gate is used to adjust the potential in an adjacent double barrier via Schottky depletion. As will be shown in this paper, the introduction of the current-limiting double barrier heterostnrcture changes the optimization of the device as compared to the Permeable Base Transistor (PBT) [2]. In particular, the gate is more effective at lower doping levels without a loss in transconductance. the transconductance is limited by the tunneling current density, and the capacitance shows only a modest dependence on the doping. The speed of the device, fT. is determined by the transwnductance, g, . and the total gate capacitance, CO, . To estimate these parameters, simulations were carried out based on a drift and d i is ion model. We used a single barrier to emulate the behavior (limit the current) of the double barrier and the barrier height was adjusted to match a typical tunneling current at peak bias (Vc=0.5 V and Jp=40 Wcm'or V,=1 .O V and Jp=140 Wcm').","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"356 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133283700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural and magnetic properties of Er doped GaN","authors":"H. Bang, J. Sawahata, M. Tsunemi, J. Seo, H. Yanagihara, E. Kita, Katsuhiro Akimoto","doi":"10.1109/ISCS.2003.1239932","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239932","url":null,"abstract":"In this paper, structural and magnetic properties of Er-doped GaN were studied. Er-doped GaN shows paramagnetic character, however, clear steps around zero fields were observed at all measured temperatures. These results indicates that the coexistence of ferromagnetic order.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"73 12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114097272","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bulk growth of compositionauy homogeneous III-V ternary anoys","authors":"P. Dutta, A. Kumar, A. Chandola, R. Pino, H. Kim, A. Dighe","doi":"10.1109/ISCS.2003.1239984","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239984","url":null,"abstract":"Substrates of ternary compound semiconductors such as GaInSb, GaInAs, InPAs, GaInP, etc. are of particular interest for electronic and optoelectronic devices. The main technical challenge in growing bulk crystals of ternary alloys is mechanical cracking of crystals due to spatial compositional inhomogeneity [ 1-41. Cracking can be eliminated by ensuring radial compositional uniformity in the crystals. A planar melt-solid interface shape during growth is necessary in maintaining radial composition uniformity. Due to inherent alloy segregation dictated by the pseudo-binary phase diagrams, the growth interface shift towards the lower temperatures. Hence if the external temperature gradient imposed by the furnace remains constant, the growth interface shape can change from convex to concave during growth. Temperature gradient and growth rate manupulation, proper melt mixing using forced convection have been found to be effective in maintaining radial homogeneity [5]. Furthermore, if the alloy composition in the melt is kept at a constant composition level, the growth interface will automatically remain flat, convex or concave depending on its initial shape. Solute feeding via double crucible technique has been attempted by previous researchers to grow uniform crystals [3,4]. However, double crucible method is suitable only for dilute alloy compositions due to technical difficulties. In this paper, we have described a self-solute feeding method wherein homogeneous ternary crystals of any desired composition could be grown by taking advantage of the fundamental solute diffusion properties in the melt [6].","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"129 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114541865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Conductance mapping for the electron and hole energy levels in InAs/GaAs self-assembled quantum dots","authors":"Wen‐Hao Chang, T. Hsu, Wen-Yen Chen, Hsiang-Szu Chang, N. Yeh, J. Chyi","doi":"10.1109/ISCS.2003.1239921","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239921","url":null,"abstract":"The authors study admittance spectroscopy of the electron and hole levels in InAs/GaAs self-assembled quantum dots. From the conductance mapping for the electron and hole levels in dots, clear s-and p-shell structures can be resolved.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122409963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Formation of high quality ohmic contacts to p-GaN using metal/transparent conducting oxides","authors":"J. Song, Dong‐Seok Leem, K. Kim, T. Seong","doi":"10.1109/ISCS.2003.1239903","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239903","url":null,"abstract":"We report on promising Ni/transparent conducting oxides for producing high quality ohmic contacts to p-GaN. It is shown that the contacts annealed at 450-600/spl deg/C for 2 min in air ambient result low specific contact resistances of 10/sup -5/-10/sup -6/ /spl Omega/cm/sup 2/. Based on the X-ray photoemission spectroscopy and Auger electron spectroscopy results, ohmic formation mechanisms are described.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122462286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}