InAs/GaAs自组装量子点中电子和空穴能级的电导映射

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239921

Wen‐Hao Chang, T. Hsu, Wen-Yen Chen, Hsiang-Szu Chang, N. Yeh, J. Chyi

{"title":"InAs/GaAs自组装量子点中电子和空穴能级的电导映射","authors":"Wen‐Hao Chang, T. Hsu, Wen-Yen Chen, Hsiang-Szu Chang, N. Yeh, J. Chyi","doi":"10.1109/ISCS.2003.1239921","DOIUrl":null,"url":null,"abstract":"The authors study admittance spectroscopy of the electron and hole levels in InAs/GaAs self-assembled quantum dots. From the conductance mapping for the electron and hole levels in dots, clear s-and p-shell structures can be resolved.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Conductance mapping for the electron and hole energy levels in InAs/GaAs self-assembled quantum dots\",\"authors\":\"Wen‐Hao Chang, T. Hsu, Wen-Yen Chen, Hsiang-Szu Chang, N. Yeh, J. Chyi\",\"doi\":\"10.1109/ISCS.2003.1239921\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors study admittance spectroscopy of the electron and hole levels in InAs/GaAs self-assembled quantum dots. From the conductance mapping for the electron and hole levels in dots, clear s-and p-shell structures can be resolved.\",\"PeriodicalId\":404065,\"journal\":{\"name\":\"2003 International Symposium on Compound Semiconductors\",\"volume\":\"69 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 International Symposium on Compound Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCS.2003.1239921\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 International Symposium on Compound Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239921","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

研究了InAs/GaAs自组装量子点中电子能级和空穴能级的导纳谱。从点中电子和空穴能级的电导映射，可以分辨出清晰的- p-壳层结构。

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Conductance mapping for the electron and hole energy levels in InAs/GaAs self-assembled quantum dots

The authors study admittance spectroscopy of the electron and hole levels in InAs/GaAs self-assembled quantum dots. From the conductance mapping for the electron and hole levels in dots, clear s-and p-shell structures can be resolved.

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2003 International Symposium on Compound Semiconductors

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