2003 International Symposium on Compound Semiconductors最新文献

{"title":"Characterization of MOCVD lateral epitaxial overgrown III-V semiconductor layers on GaAs substrates","authors":"A. Norman, M. Hanna, M. Romero, K. Jones, M. Al‐Jassim","doi":"10.1109/ISCS.2003.1239898","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239898","url":null,"abstract":"We have studied the lateral epitaxial overgrowth by MOCVD of a variety of highly mismatched III-V semiconductors on GaAs substrates. For [001] substrates we determined the oxide stripe orientation that gives the maximum lateral growth rate to be /spl sim/ 25/sup o/ from [110]. We successfully achieved that lateral overgrowth of In/sub x/Ga/sub 1-x/As alloys on GaAs and found that the use of Bi as a surfactant led to an improvement in the morphology and luminescence uniformity. The studies have been extended to the lateral epitaxial overgrowth of InAs, GaP, and InP.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125153693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electron injection in III-nitride semiconductors","authors":"L. Chernyak","doi":"10.1109/ISCS.2003.1239927","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239927","url":null,"abstract":"In this paper, it is found that electron injection into p-(Al)GaN-either from the electron beams of Scanning Electron Microscope (SEM) or from the application of an external voltage in a solid state device-increase the critical minority carrier diffusion length and lifetime. Consistent changes were observed in the material/sup ,/s optoelectronic properties, including photoresponse (2), and were attributed to charging of deep metastable Mg dopant related centers. The novel effects, induced by electron injection in III-Nitrides, and the ways to exploit them for tailoring the material/sup ,/s fundamental properties will be discussed. Application of the effects for performance improvement of photovoltaic UV detectors will be demonstrated.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"436 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126114963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multiple-wavelength InGaN-based LED arrays","authors":"S. Sakai, K. Aoyama, Hongdong Li, H. Sato, Yong Bae Lee","doi":"10.1109/ISCS.2003.1239945","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239945","url":null,"abstract":"In this report we demonstrate a novel multiple-color LED array in the emission wavelength of 450 nm to 510 nm. This novel device has been fabricated by grooving and depositing Ti on the back surface of a sapphire substrate to lower the substrate surface temperature during MOCVD(metalorganic chemical vapor deposition) growth. This LED is useful in realizing white LED with improved color rendering and in other applications that need multiple colors.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114915678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"DC, and RF scattering parameters, noise and power characteristics of enhancement-mode In/sub 0.51/Ga/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As/GaAs power pHEMTs","authors":"Yo‐Sheng Lin, Hsing-Yuan Tu, Dou-Shuan-Chou, Shey-Shi Lu","doi":"10.1109/ISCS.2003.1239986","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239986","url":null,"abstract":"","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129671402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High speed, low power electronics using Sb-based semiconductors","authors":"R. Magno, J. B. Boos, B. R. Bennett, K. Ikossi, E. Glaser, N. Papanicolaou, M.G. Anconca, B. Tinkham, W. Kruppa, D. Park, B. V. Shanabrook, J. Mittereder, W. Chang, K. Hobart, R. Bass, H. Dietrich, S. Mohney, S. Wang, J. Robinson, R. Tsai, M. Barsky, A. Gutierrez","doi":"10.1109/ISCS.2003.1239962","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239962","url":null,"abstract":"In this paper the current status of the design,fabrication,and characterization of Sb-based HEMTs (6.05Am) and HBTs(6.2Am) in our group will be presented.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130658011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Luminescence efficiency of InGaN multiple quantum well UV-LEDs","authors":"C.-C. Pan, Chia-Ming Lee, Wen-Jay Hsu, Guan-Ting Chen, J. Chyi","doi":"10.1109/ISCS.2003.1239950","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239950","url":null,"abstract":"In this paper, we have conduced a series of measurements to investigate the luminescence efficiency of UV-LEDs with emission wavelength of 400 nm. Injection current-dependent characteristics are analysed to clarify the dominant factors affecting the luminescence efficiency of UV-LEDs.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114691197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photoluminescence and lasing characteristics of 1.3 /spl mu/m GaInNAs/GaAsP/GaAs strain-compensated quantum wells","authors":"M. Kawaguchi, T. Miyamoto, S. Kawakami, A. Saito, F. Koyama","doi":"10.1109/ISCS.2003.1239912","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239912","url":null,"abstract":"We investigated photoluminescence (PL) and lasing characteristics of 1.3 /spl mu/m GaInNAs/GaAsP/GaAs strain-compensated quantum wells by MOCVD. We observed the increase of PL intensity and reduction of the threshold by applying appropriate GaAsP barriers.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114818990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High efficiency deep UV light emitting diodes at 285 nm","authors":"M. Shatalov, J. Zhang, V. Adivarahan, A. Chitnis, S. Rai, S. Wu, J. Sun, V. Mandavilli, M.A. Khan","doi":"10.1109/ISCS.2003.1239944","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239944","url":null,"abstract":"In this report we present the results of a study where small junction area devices were used to increase the current density and suppress the effect of nonradiative recombination thereby achieving a record high external quantum efficiency of 0.14% for a 285 nm two AlGaN quantum well LED.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124117860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Precise aperture control of oxidized GaAs surface emitting laser using in-situ monitered oxidation process","authors":"H. Sai, F. Koyarna, K. Iga","doi":"10.1109/ISCS.2003.1239994","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239994","url":null,"abstract":"The precise and reproducible control of oxide aperture diameters in oxide-VCSELs (Vertical Cavity Surface Emitting Lasers) is needed for highly reliable and low-cost manufacturing as well as for realizing small aperture single mode devices.') However, the precise control of oxidation process is still a remaining issue in a production stage. In this paper, we develop a novel in-situ monitoring system of GaAlAs wet oxidation for the precise control of oxide apertures in 850 nm GaAs VCSELs. Figure 1 shows the schematic setup of our oxidation system with in-situ optical monitoring system using an infrared microscope system combined with a steam furnace. Oxidation temperatures and corresponding oxidation rates are ranging from 420 to 460°C and 0.5 to 2.4 p d m i n , respectively. Samples we used include single 40 nm Al,,,,Ga,,,,As layer for oxide-current confinement underneath a 24-paired p-DBR of standard 850 nm VCSEL wafers?) We formed 4 p height and 33 pn square mesas by using standard lithography and inductively coupled plasma etching. Figure 2 shows the top view of an oxidized mesa during wet oxidation observed by an in-situ monitoring microscope. The oxide-aperture diameters are plotted as a function of oxidation time at various substrate temperatures (TJ, which were measured by the in-situ monitoring system. The results show that an oxidation rate increases with an aperture diameter of less than 7 pm under all T, conditions, while an oxidation rate seems almost constant at diameters ranging from 7 to 20 p. In addition, we found that there is dead time before noticeable oxidation, which is dependent on the oxidation temperature T,. Also, there is run-to-run variation, which is shown by different experiments #A and #B as shown in Fig. 3.\" By using the in-situ monitoring of aperture diameters, we are able to control precisely the diameter in spite of nonlinear nature of such oxidation rates. Figure 4 shows an oxidation process sequence using the in-situ monitoring system. We used a two-step oxidation sequence with different oxidation rates of 2 pdmin . and 0.5 @min. for better control in small oxide apertured devices. The oxidation temperature was reduced to slow down an oxidation rate from 2 pn to 0.5 pn when the aperture size is 6 pn ahead a target size. Figure 5 shows measured results of oxide aperture diameters for three different target diameters of a) 3.5 l~n, b) 6.0 pm and c) 12 pn. As shown in the figure, we archived run-to-run variation of I0.6 pn in all cases of a), b) and c) without any calibration prior to oxidation process. The m-to-run variation without in-situ monitoring is about M p, which could be dramatically improved in our system. Figure 6 shows typical L/ I characteristic of 850 nm GaAs VCSELs with a 12 pm oxide aperture fabricated by our in-situ monitored oxidation process. We believe that this is the first demonstration of the precise control of oxide-apertures by in-situ monitoring.') We expect that ow proposed method may e","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128946442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Self-heating effect on device characteristics of GaN/AlGaN HEMTs: 2D Monte Carlo device simulation","authors":"H. Fujishiro, N. Mikami, T. Takei, M. Izawa, T. Moku, K. Ohtuka","doi":"10.1109/ISCS.2003.1239960","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239960","url":null,"abstract":"In this paper, the mechanism of the self-heating in the GaN/AlGaN HEMT and its influence on the device performance theoritically by 2D Monte Carlo device simulation. Three different substrates (i.e., 6H-SiC, sapphire and Si) have been used and compared in this work.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"189 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115239493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}