High efficiency deep UV light emitting diodes at 285 nm

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239944

M. Shatalov, J. Zhang, V. Adivarahan, A. Chitnis, S. Rai, S. Wu, J. Sun, V. Mandavilli, M.A. Khan

引用次数: 0

Abstract

In this report we present the results of a study where small junction area devices were used to increase the current density and suppress the effect of nonradiative recombination thereby achieving a record high external quantum efficiency of 0.14% for a 285 nm two AlGaN quantum well LED.

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285nm的高效深紫外发光二极管

在本报告中，我们介绍了一项研究的结果，其中使用小结面积器件来增加电流密度并抑制非辐射重组的影响，从而为285 nm的双AlGaN量子阱LED实现了创纪录的0.14%的高外量子效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2003 International Symposium on Compound Semiconductors

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