高速，低功耗的电子元件使用基于锑的半导体

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239962

R. Magno, J. B. Boos, B. R. Bennett, K. Ikossi, E. Glaser, N. Papanicolaou, M.G. Anconca, B. Tinkham, W. Kruppa, D. Park, B. V. Shanabrook, J. Mittereder, W. Chang, K. Hobart, R. Bass, H. Dietrich, S. Mohney, S. Wang, J. Robinson, R. Tsai, M. Barsky, A. Gutierrez

{"title":"高速，低功耗的电子元件使用基于锑的半导体","authors":"R. Magno, J. B. Boos, B. R. Bennett, K. Ikossi, E. Glaser, N. Papanicolaou, M.G. Anconca, B. Tinkham, W. Kruppa, D. Park, B. V. Shanabrook, J. Mittereder, W. Chang, K. Hobart, R. Bass, H. Dietrich, S. Mohney, S. Wang, J. Robinson, R. Tsai, M. Barsky, A. Gutierrez","doi":"10.1109/ISCS.2003.1239962","DOIUrl":null,"url":null,"abstract":"In this paper the current status of the design,fabrication,and characterization of Sb-based HEMTs (6.05Am) and HBTs(6.2Am) in our group will be presented.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High speed, low power electronics using Sb-based semiconductors\",\"authors\":\"R. Magno, J. B. Boos, B. R. Bennett, K. Ikossi, E. Glaser, N. Papanicolaou, M.G. Anconca, B. Tinkham, W. Kruppa, D. Park, B. V. Shanabrook, J. Mittereder, W. Chang, K. Hobart, R. Bass, H. Dietrich, S. Mohney, S. Wang, J. Robinson, R. Tsai, M. Barsky, A. Gutierrez\",\"doi\":\"10.1109/ISCS.2003.1239962\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper the current status of the design,fabrication,and characterization of Sb-based HEMTs (6.05Am) and HBTs(6.2Am) in our group will be presented.\",\"PeriodicalId\":404065,\"journal\":{\"name\":\"2003 International Symposium on Compound Semiconductors\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 International Symposium on Compound Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCS.2003.1239962\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 International Symposium on Compound Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239962","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

在本文中，我们将介绍基于sb的hemt (6.05Am)和HBTs(6.2Am)的设计，制造和表征的现状。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

High speed, low power electronics using Sb-based semiconductors

In this paper the current status of the design,fabrication,and characterization of Sb-based HEMTs (6.05Am) and HBTs(6.2Am) in our group will be presented.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2003 International Symposium on Compound Semiconductors

自引率

0.00%

发文量