Multiple-wavelength InGaN-based LED arrays

Abstract

In this report we demonstrate a novel multiple-color LED array in the emission wavelength of 450 nm to 510 nm. This novel device has been fabricated by grooving and depositing Ti on the back surface of a sapphire substrate to lower the substrate surface temperature during MOCVD(metalorganic chemical vapor deposition) growth. This LED is useful in realizing white LED with improved color rendering and in other applications that need multiple colors.