2003 International Symposium on Compound Semiconductors最新文献_第2页

Current conduction paths in GaN 氮化镓中的电流传导路径

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239925

H. Morkoç, A. Baski, R. Molnar, J. Jasinski, Z. Liliental-Weber

引用次数: 0

Analysis of high-temperature continuous wave operation of type-II interband cascade lasers ii型带间级联激光器高温连续波工作分析

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239992

M. Kisin, S. Suchalkin, J. Bruno, G. Belenky, S. Luryi

{"title":"Analysis of high-temperature continuous wave operation of type-II interband cascade lasers","authors":"M. Kisin, S. Suchalkin, J. Bruno, G. Belenky, S. Luryi","doi":"10.1109/ISCS.2003.1239992","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239992","url":null,"abstract":"In mid-infixed quantum well lasers the optical gain gop,(n,7) is a strong fkction of both the charge carrier concentration and the temperature. At threshold, the condition Tgopr = a,,,, implies a certain relationship between the threshold concentration nth and temperature &. On the other hand, the carrier concentration in active quantum wells is determined by the injection current, which in turn strongly affects the electron temperature via both lattice and electron heating. In equilibrium, this implies another relationship Te(ne), which represents all possible steady states of the system on the n,-T, plane. Comparison of the two dependencies yields a simple and illustrative method for analyzing the temperature performance of semiconductor lasers in the continuous-wave (CW) operation regime [l]. The purpose of this work is to highlight the physical effects most critical for the high-temperature operation of novel type-I1 interband cascade lasers (ICL). The model includes the material gain, optical mode confinement, carrier and lattice overheating, as well as the electrical bias conditions. Auger recombination is essentially responsible for threshold current in type-I1 mid-IR lasers and, is therefore, the basic reason for limiting CW operation of these devices to low temperatures. We show, however, that high value of the specific thermal resistance, which is typical for antimonide based ICL [2], primarily determines the ultimate cause of the device failure. Figure 1 shows 3D surface of the modal gain g, = rgopf. Straight lines on the coordinate plane n,-T, below are isogain curves. We assume that optical loss is not a strong fkction of ne and T, in type-II interband lasers [3], so that the threshold “isogain” line g,= aopf would represent the dependence Tfh(nrh); see also bold straight line in Figure 2. Auger recombination process dominates the current at the threshold, however, the overall device overheating is mostly due to the rise of the lattice temperature; see dashed curves in Figure 2. The intersection of the electron temperature curve with the threshold isogain curve in Figure 2 defines the laser threshold operation point. It is readily seen that for low values of the Auger recombination rate there is a robust lasing generation (lower pair of bold curves), while a 4-fold increase of the Auger coefficient already brings the device out of operation (upper pair of bold curves). It is evident that the electron heating plays a secondary role in the overall device overheating, while the lattice temperature rise dominates the process. Remarkably, just a 3-fold decrease of the thermal resistance brings the laser back into operation range, cf. the thin curves in Fig. 2. -","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122117146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Low turn-on voltage InP/In/sub 0.7/Ga/sub 0.3/As/InP double heterojunction bipolar transistors 低导通电压InP/In/sub 0.7/Ga/sub 0.3/As/InP双极异质结晶体管

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239976

Y. Kim, K. Lai, M. Rodwell, A. Gossard

引用次数: 0

Stress evolution and nitrogen incorporation in GaAsN films 应力演化与氮在GaAsN薄膜中的掺入

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239909

M. Reason, W. Ye, X. Weng, G. Obeidi, R. Goldman, V. Rotberg

引用次数: 0

Nitride UV emitters 氮化紫外线发射器

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239943

T. Nishida, T. Ban, N. Kobayashi

引用次数: 0

Detection of carbon-related bandgap states in GaN using deep level optical spectroscopy 利用深能级光谱学检测氮化镓中与碳相关的带隙态

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239877

S. Ringel, A. Armstrong, A. Arehart, B. Moran, U. Mishra, J. Speck

引用次数: 3

P-doping of zinc oxide using phosphorous oxide and thermal annealing 用氧化磷和热退火法制备氧化锌的p掺杂

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239933

Seong-Ju Park

引用次数: 0

Magnetic anisotropy and structural properties of ultrathin epitaxial Fe films on GaAs(001) and GaAs(113)A substrates GaAs(001)和GaAs(113)A衬底上超薄外延铁薄膜的磁各向异性和结构特性

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239931

J. Herfort, H.-P. Schonherr, P. Muduli, W. Braun, A. Trampert, K. Ploog

引用次数: 0

Growth-direction dependence of optical properties in epitaxially laterally overgrown GaN 外延横向过度生长GaN中光学特性的生长方向依赖性

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239893

S. Srinivasan, L. Geng, L. Shi, F. Ponce, F. Bertram, J. Christen, Y. Narukawa, S. Tanaka

引用次数: 0

Investigation of quantum effects in monolithic integrated circuits based on RTDs and HEMTs by simulations with a quantum hydrodynamic transport model 基于rtd和hemt的单片集成电路中量子效应的量子流体动力学输运模型模拟研究

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI: 10.1109/ISCS.2003.1239989

J. Hontschel, W. Klix, R. Stenzel

{"title":"Investigation of quantum effects in monolithic integrated circuits based on RTDs and HEMTs by simulations with a quantum hydrodynamic transport model","authors":"J. Hontschel, W. Klix, R. Stenzel","doi":"10.1109/ISCS.2003.1239989","DOIUrl":"https://doi.org/10.1109/ISCS.2003.1239989","url":null,"abstract":"Circuits which using resonant tunneling diodes (RTDs) hold promise as a technology for ultra dense high speed integrated digital logic circuits. The negative differential resistance of the current-voltage characteristic in RTDs can be used to reduce device counts per circuit functions, thus increasing circuit integration density. The very fast switching capability makes them suitable for high speed circuits. High electron mobility transistors (HEMTs) integrated with RTDs can give similarly avails as well as also reducing power consumption, due to the gain and high input to output isolation provided by the transistors. This paper describes the first reported numerical simulations of monolithic integrated circuits of resonant tunneling structures and high electron mobility transistor based on 1%.53G%.47As/ Ino,szAlo,48As/InP with a novel quantum hydrodynamic transport model (QHD-Model). For the numerical investigations the device simulator SIMBA is used, which is capable to handle complex device geometries as well as various physical models represented by certain sets of partial differential equations. The quantum potential is implemented to include quantum mechanical transport phenomena in different quantum size devices. The coupled solution of the hydrodynamic transport model and the quantum correction potential, which is included in the transport and in the energy balance equations, allows to model resonant tunneling of carriers through potential barriers and particle build up in potential wells. The quantum hydrodynamic simulations, which is based on a quantum fluid dynamic model [I], offers expanding possibilities for the understanding as well as the design of novel quantum sized semiconductor devices. The device structure of the monolithic integrated parallel connection between RTD and HEMT based on I ~ ~ . ~ , G ~ , ~ ~ A S / I ~ ~ . ~ ~ A I O . ~ ~ A S / I ~ P , is represented in Fig. 1. Experimental investigations of such structures are shown in [2], where they are applied for high performance monostablebistable transition logic elements. The calculated operating principle of the integrated parallel connection of the RTD with a HEMT is represented in the output characteristics of Fig. 2. The total drain current (ID) is equal to the sum of the current passing through the RTD (IRTD) and the HEMT ( I ~ M T ) . Since the gate-source voltage (VGS) can modulate IHEMT, ID is also modulated by VGS. The result is that the peak current of the integrated device, especially of the integrated RTD, is modulated by VGS. It should be noted that the resonant-tunneling current through the RTD remains unchanged at different gate biases. Fig. 3 shows the transfer characteristics at different drain-source voltages of the integrated parallel connection of the RTD and the HEMT. How expected, an increasing of the transfer characteristic by lower drain-source voltages can be detected. The electron density at VDS,~* and V D S , ~ ~ ~ ~ ~ in the range of the RTD is ","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"517 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116233385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0