{"title":"低导通电压InP/In/sub 0.7/Ga/sub 0.3/As/InP双极异质结晶体管","authors":"Y. Kim, K. Lai, M. Rodwell, A. Gossard","doi":"10.1109/ISCS.2003.1239976","DOIUrl":null,"url":null,"abstract":"In this paper, low V/sub be/ HBTs were developed in the InP based material system, taking advantage of both its maturity and the high bandgap and breakdown field of an InP collector.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low turn-on voltage InP/In/sub 0.7/Ga/sub 0.3/As/InP double heterojunction bipolar transistors\",\"authors\":\"Y. Kim, K. Lai, M. Rodwell, A. Gossard\",\"doi\":\"10.1109/ISCS.2003.1239976\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, low V/sub be/ HBTs were developed in the InP based material system, taking advantage of both its maturity and the high bandgap and breakdown field of an InP collector.\",\"PeriodicalId\":404065,\"journal\":{\"name\":\"2003 International Symposium on Compound Semiconductors\",\"volume\":\"61 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 International Symposium on Compound Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCS.2003.1239976\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 International Symposium on Compound Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239976","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low turn-on voltage InP/In/sub 0.7/Ga/sub 0.3/As/InP double heterojunction bipolar transistors
In this paper, low V/sub be/ HBTs were developed in the InP based material system, taking advantage of both its maturity and the high bandgap and breakdown field of an InP collector.
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