Low turn-on voltage InP/In/sub 0.7/Ga/sub 0.3/As/InP double heterojunction bipolar transistors

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239976

Y. Kim, K. Lai, M. Rodwell, A. Gossard

引用次数: 0

Abstract

In this paper, low V/sub be/ HBTs were developed in the InP based material system, taking advantage of both its maturity and the high bandgap and breakdown field of an InP collector.

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低导通电压InP/In/sub 0.7/Ga/sub 0.3/As/InP双极异质结晶体管

本文利用InP基材料体系的成熟和InP集电极的高带隙和击穿场，开发了低V/sub / HBTs。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2003 International Symposium on Compound Semiconductors

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