用氧化磷和热退火法制备氧化锌的p掺杂

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239933

Seong-Ju Park

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摘要

用氧化磷和热退火的方法讨论了氧化锌的p掺杂。在高温下溅射掺杂P/sub 2/O/sub 5/的ZnO靶材，然后进行热退火，成功制备了P-ZnO薄膜。采用射频溅射法在蓝宝石c平面上生长ZnO薄膜。研究了RTA处理ZnO薄膜的载流子浓度。

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P-doping of zinc oxide using phosphorous oxide and thermal annealing

We have discussed p-doping of zinc oxide using phosphorus oxide and thermal annealing. P-ZnO thin films were successfully prepared by sputtering a ZnO target doped with P/sub 2/O/sub 5/ at high temperatures followed by a thermal annealing. ZnO thin films were grown on sapphire c-plane by radio-frequency sputtering. Carrier concentration of RTA treated ZnO thin films has been investigated.

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2003 International Symposium on Compound Semiconductors

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