Nitride UV emitters

Abstract

Nitride semiconductor can provide wide band gap energy of direct transition, which enables ultraviolet (UV) emission from 200 to 400 nm. The efficiency of LEDs is usually evaluated based on internal quantum efficiency and extraction efficiency. We fabricated an AlGaN-SQW-LED by directly growing it on AlN formed on sapphire substrate, both of which are transparent in the UV range. Sensing and certifications on mobile or remote devices would also be practical by introducing 250-350 nm UV-LEDs.