P-doping of zinc oxide using phosphorous oxide and thermal annealing

Abstract

We have discussed p-doping of zinc oxide using phosphorus oxide and thermal annealing. P-ZnO thin films were successfully prepared by sputtering a ZnO target doped with P/sub 2/O/sub 5/ at high temperatures followed by a thermal annealing. ZnO thin films were grown on sapphire c-plane by radio-frequency sputtering. Carrier concentration of RTA treated ZnO thin films has been investigated.