应力演化与氮在GaAsN薄膜中的掺入

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239909

M. Reason, W. Ye, X. Weng, G. Obeidi, R. Goldman, V. Rotberg

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引用次数: 0

摘要

我们使用原位和非原位测量相结合的方法研究了GaAsN薄膜中的应力演化。核反应分析和卢瑟福后向散射光谱在通道和非通道条件下的比较表明，N在非取代位点的结合明显依赖于成分。

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Stress evolution and nitrogen incorporation in GaAsN films

We have investigated stress evolution in GaAsN films, using a combination of in situ and ex situ measurements. A comparison of nuclear reaction analysis and Rutherford backscattering spectrometry in channeling and nonchanneling conditions suggests significant composition dependent incorporation of N into nonsubstitutional sites.

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2003 International Symposium on Compound Semiconductors

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