285nm的高效深紫外发光二极管

2003 International Symposium on Compound Semiconductors Pub Date : 2003-10-27 DOI:10.1109/ISCS.2003.1239944

M. Shatalov, J. Zhang, V. Adivarahan, A. Chitnis, S. Rai, S. Wu, J. Sun, V. Mandavilli, M.A. Khan

{"title":"285nm的高效深紫外发光二极管","authors":"M. Shatalov, J. Zhang, V. Adivarahan, A. Chitnis, S. Rai, S. Wu, J. Sun, V. Mandavilli, M.A. Khan","doi":"10.1109/ISCS.2003.1239944","DOIUrl":null,"url":null,"abstract":"In this report we present the results of a study where small junction area devices were used to increase the current density and suppress the effect of nonradiative recombination thereby achieving a record high external quantum efficiency of 0.14% for a 285 nm two AlGaN quantum well LED.","PeriodicalId":404065,"journal":{"name":"2003 International Symposium on Compound Semiconductors","volume":"113 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High efficiency deep UV light emitting diodes at 285 nm\",\"authors\":\"M. Shatalov, J. Zhang, V. Adivarahan, A. Chitnis, S. Rai, S. Wu, J. Sun, V. Mandavilli, M.A. Khan\",\"doi\":\"10.1109/ISCS.2003.1239944\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this report we present the results of a study where small junction area devices were used to increase the current density and suppress the effect of nonradiative recombination thereby achieving a record high external quantum efficiency of 0.14% for a 285 nm two AlGaN quantum well LED.\",\"PeriodicalId\":404065,\"journal\":{\"name\":\"2003 International Symposium on Compound Semiconductors\",\"volume\":\"113 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 International Symposium on Compound Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCS.2003.1239944\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 International Symposium on Compound Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239944","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在本报告中，我们介绍了一项研究的结果，其中使用小结面积器件来增加电流密度并抑制非辐射重组的影响，从而为285 nm的双AlGaN量子阱LED实现了创纪录的0.14%的高外量子效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High efficiency deep UV light emitting diodes at 285 nm

In this report we present the results of a study where small junction area devices were used to increase the current density and suppress the effect of nonradiative recombination thereby achieving a record high external quantum efficiency of 0.14% for a 285 nm two AlGaN quantum well LED.

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2003 International Symposium on Compound Semiconductors

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